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dc.contributor.authorFoisal, ARM
dc.contributor.authorDinh, T
dc.contributor.authorTanner, P
dc.contributor.authorPhan, HP
dc.contributor.authorNguyen, TK
dc.contributor.authorIacopi, A
dc.contributor.authorStreed, EW
dc.contributor.authorDao, DV
dc.date.accessioned2019-05-29T13:17:54Z
dc.date.available2019-05-29T13:17:54Z
dc.date.issued2019
dc.identifier.isbn9783030042899
dc.identifier.issn2190-3018
dc.identifier.doi10.1007/978-3-030-04290-5_22
dc.identifier.urihttp://hdl.handle.net/10072/382604
dc.description.abstractThis paper demonstrates the prospect of using a 3C-SiC/Si heterostructure as an ultraviolet and visible photodetector. The heterojunction has been grown epitaxially on Si-substrate via a Low Pressure Chemical Vapor Deposition technique at 1000 °C. The detector shows a good diode characteristic with a rectification ratio of 1.03 × 103 and a reverse leakage current of 7.2 × 10−6 A at 2 V in dark conditions. The responsivity of the device is found to be 5.4 × 10−2 A/W and 3.18 × 10−2 A/W at a reverse bias of 2 V under visible (635 nm) and UV (375 nm) illumination, respectively. An energy band diagram is proposed to explain the photosensitivity of the heterostructure.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherSpringer
dc.publisher.placeCham
dc.relation.ispartofconferencenameKES-SDM 2018
dc.relation.ispartofconferencetitleSmart Innovation, Systems and Technologies
dc.relation.ispartofdatefrom2018-06-25
dc.relation.ispartofdateto2018-06-26
dc.relation.ispartoflocationGold Coast, Australia
dc.relation.ispartofpagefrom208
dc.relation.ispartofpageto216
dc.relation.ispartofvolume130
dc.subject.fieldofresearchFunctional materials
dc.subject.fieldofresearchcode401605
dc.titleUltraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction
dc.typeConference output
dc.type.descriptionE1 - Conferences
dc.type.codeE - Conference Publications
dc.description.versionAccepted Manuscript (AM)
gro.facultyGriffith Sciences, School of Engineering and Built Environment
gro.rights.copyright© 2018 Springer Berlin/Heidelberg. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher.The original publication is available at www.springerlink.com
gro.hasfulltextFull Text
gro.griffith.authorTanner, Philip G.
gro.griffith.authorStreed, Erik
gro.griffith.authorDao, Dzung V.
gro.griffith.authorNguyen, Khoa T.


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    Contains papers delivered by Griffith authors at national and international conferences.

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