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  • Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si Heterojunction

    Author(s)
    Foisal, Abu Riduan Md
    Dinh, Toan
    Viet, Thanh Nguyen
    Tanner, Philip
    Hoang-Phuong, Phan
    Tuan-Khoa, Nguyen
    Haylock, Ben
    Streed, Erik W
    Lobino, Mirko
    Dzung, Viet Dao
    Griffith University Author(s)
    Tanner, Philip G.
    Streed, Erik
    Dao, Dzung V.
    Nguyen Tuan, Khoa
    Year published
    2019
    Metadata
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    Abstract
    Self-powered photodetectors (PDs) are highly desirable for many applications, ranging from smart cities to optical communications. Herein, we report on a selfpowered broadband [UV to near-infrared (NIR)] PD based on a single-crystalline SiC (100)/Si (100) heterojunction. In self-powered photovoltaic detection mode, the detector exhibits a high responsivity (2500 V/W at 8.0 x 10 -6 W/cm 2 , 521 nm) and specific detectivity (~1013 Jones at 8.0 x 10 -6 W/cm 2 , 521 nm) under UV, visible, and NIR spectral illuminations thanks to the superior rectification property of the heterojunction which results in significantly reducing the ...
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    Self-powered photodetectors (PDs) are highly desirable for many applications, ranging from smart cities to optical communications. Herein, we report on a selfpowered broadband [UV to near-infrared (NIR)] PD based on a single-crystalline SiC (100)/Si (100) heterojunction. In self-powered photovoltaic detection mode, the detector exhibits a high responsivity (2500 V/W at 8.0 x 10 -6 W/cm 2 , 521 nm) and specific detectivity (~1013 Jones at 8.0 x 10 -6 W/cm 2 , 521 nm) under UV, visible, and NIR spectral illuminations thanks to the superior rectification property of the heterojunction which results in significantly reducing the dark current. The device also shows high illumination ON/OFF switching ratios, as high as 2.2x10 7 , with an excellent stability and repeatability. A detailed insight about electron- hole pairs generation, separation, and Fermi-energy level shifting at different illumination conditions has been elucidated via energy band diagrams.
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    Journal Title
    IEEE TRANSACTIONS ON ELECTRON DEVICES
    Volume
    66
    Issue
    4
    DOI
    https://doi.org/10.1109/TED.2019.2899742
    Subject
    Electrical engineering
    Publication URI
    http://hdl.handle.net/10072/384175
    Collection
    • Journal articles

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