Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si Heterojunction
Author(s)
Foisal, Abu Riduan Md
Dinh, Toan
Viet, Thanh Nguyen
Tanner, Philip
Hoang-Phuong, Phan
Tuan-Khoa, Nguyen
Haylock, Ben
Streed, Erik W
Lobino, Mirko
Dzung, Viet Dao
Year published
2019
Metadata
Show full item recordAbstract
Self-powered photodetectors (PDs) are highly desirable for many applications, ranging from smart cities to optical communications. Herein, we report on a selfpowered broadband [UV to near-infrared (NIR)] PD based on a single-crystalline SiC (100)/Si (100) heterojunction. In self-powered photovoltaic detection mode, the detector exhibits a high responsivity (2500 V/W at 8.0 x 10 -6 W/cm 2 , 521 nm) and specific detectivity (~1013 Jones at 8.0 x 10 -6 W/cm 2 , 521 nm) under UV, visible, and NIR spectral illuminations thanks to the superior rectification property of the heterojunction which results in significantly reducing the ...
View more >Self-powered photodetectors (PDs) are highly desirable for many applications, ranging from smart cities to optical communications. Herein, we report on a selfpowered broadband [UV to near-infrared (NIR)] PD based on a single-crystalline SiC (100)/Si (100) heterojunction. In self-powered photovoltaic detection mode, the detector exhibits a high responsivity (2500 V/W at 8.0 x 10 -6 W/cm 2 , 521 nm) and specific detectivity (~1013 Jones at 8.0 x 10 -6 W/cm 2 , 521 nm) under UV, visible, and NIR spectral illuminations thanks to the superior rectification property of the heterojunction which results in significantly reducing the dark current. The device also shows high illumination ON/OFF switching ratios, as high as 2.2x10 7 , with an excellent stability and repeatability. A detailed insight about electron- hole pairs generation, separation, and Fermi-energy level shifting at different illumination conditions has been elucidated via energy band diagrams.
View less >
View more >Self-powered photodetectors (PDs) are highly desirable for many applications, ranging from smart cities to optical communications. Herein, we report on a selfpowered broadband [UV to near-infrared (NIR)] PD based on a single-crystalline SiC (100)/Si (100) heterojunction. In self-powered photovoltaic detection mode, the detector exhibits a high responsivity (2500 V/W at 8.0 x 10 -6 W/cm 2 , 521 nm) and specific detectivity (~1013 Jones at 8.0 x 10 -6 W/cm 2 , 521 nm) under UV, visible, and NIR spectral illuminations thanks to the superior rectification property of the heterojunction which results in significantly reducing the dark current. The device also shows high illumination ON/OFF switching ratios, as high as 2.2x10 7 , with an excellent stability and repeatability. A detailed insight about electron- hole pairs generation, separation, and Fermi-energy level shifting at different illumination conditions has been elucidated via energy band diagrams.
View less >
Journal Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
66
Issue
4
Subject
Physical sciences
Electronic sensors
Nanomaterials
Electronics, sensors and digital hardware