Nanoindentation of cubic silicon carbide on silicon film

Abstract

In this work, mechanical properties of an epitaxial silicon carbide-on-silicon (3C-SiC-on-Si) sample were extracted using a Micro Materials Nanotest® indentation system. Maximum load, penetration depth and loading rate were set at 25 mN, 550 nm and 5 mN s−1, respectively. We first plot the load-depth curve of 3C-SiC film and Si substrate. Then, we find the maximum values of hardness, tensile modulus, shear strength, shear modulus and tensile stress of 3C-SiC film. The obtained data provide evidence of the suitability of this film to be applied as an electroacoustic transducer.