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dc.contributor.authorZawawi, Siti
dc.contributor.authorHamzah, Azrul
dc.contributor.authorMajlis, Burhanuddin
dc.contributor.authorMohd-Yasin, Faisal
dc.date.accessioned2019-07-31T05:23:54Z
dc.date.available2019-07-31T05:23:54Z
dc.date.issued2019
dc.identifier.issn0021-4922en_US
dc.identifier.doi10.7567/1347-4065/ab0a28en_US
dc.identifier.urihttp://hdl.handle.net/10072/384528
dc.description.abstractIn this work, mechanical properties of an epitaxial silicon carbide-on-silicon (3C-SiC-on-Si) sample were extracted using a Micro Materials Nanotest® indentation system. Maximum load, penetration depth and loading rate were set at 25 mN, 550 nm and 5 mN s−1, respectively. We first plot the load-depth curve of 3C-SiC film and Si substrate. Then, we find the maximum values of hardness, tensile modulus, shear strength, shear modulus and tensile stress of 3C-SiC film. The obtained data provide evidence of the suitability of this film to be applied as an electroacoustic transducer.en_US
dc.description.peerreviewedYesen_US
dc.languageEnglishen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.relation.ispartofissue5en_US
dc.relation.ispartofjournalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.relation.ispartofvolume58en_US
dc.subject.fieldofresearchMathematical Sciencesen_US
dc.subject.fieldofresearchPhysical Sciencesen_US
dc.subject.fieldofresearchcode01en_US
dc.subject.fieldofresearchcode02en_US
dc.titleNanoindentation of cubic silicon carbide on silicon filmen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Articlesen_US
dc.type.codeC - Journal Articlesen_US
gro.hasfulltextNo Full Text
gro.griffith.authorMohd-Yasin, Faisal


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