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  • Impact of carrier injections on the threshold voltage in p-GaN gate AIGaN/GaN power HEMTs

    Author(s)
    Li, Baikui
    Tang, Xi
    Li, Hui
    Moghadam, Hamid Amini
    Zhang, Zhaofu
    Han, Jisheng
    Nam-Trung, Nguyen
    Dimitrijev, Sima
    Wang, Jiannong
    Griffith University Author(s)
    Dimitrijev, Sima
    Nguyen, Nam-Trung
    Year published
    2019
    Metadata
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    Abstract
    We investigated the threshold voltage (V TH) shift in p-GaN gate AlGaN/GaN power HEMTs under both forward and reverse gate bias conditions at different temperatures. With increasing forward gate bias, the V TH first positively shifted and then decreased. While at the reverse gate bias, V TH shifts monotonically increased towards the positive direction. Positive V TH shifts were due to electron trapping while its decrease was attributed to the optical pumping by the internal electroluminescence (EL). The EL emission from the p-GaN gate region was captured. A light illumination test was performed to verify the effectiveness ...
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    We investigated the threshold voltage (V TH) shift in p-GaN gate AlGaN/GaN power HEMTs under both forward and reverse gate bias conditions at different temperatures. With increasing forward gate bias, the V TH first positively shifted and then decreased. While at the reverse gate bias, V TH shifts monotonically increased towards the positive direction. Positive V TH shifts were due to electron trapping while its decrease was attributed to the optical pumping by the internal electroluminescence (EL). The EL emission from the p-GaN gate region was captured. A light illumination test was performed to verify the effectiveness of optical pumping.
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    Journal Title
    APPLIED PHYSICS EXPRESS
    Volume
    12
    Issue
    6
    DOI
    https://doi.org/10.7567/1882-0786/ab1b19
    Subject
    Physical sciences
    Publication URI
    http://hdl.handle.net/10072/385147
    Collection
    • Journal articles

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