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dc.contributor.authorLi, Baikui
dc.contributor.authorTang, Xi
dc.contributor.authorLi, Hui
dc.contributor.authorMoghadam, Hamid Amini
dc.contributor.authorZhang, Zhaofu
dc.contributor.authorHan, Jisheng
dc.contributor.authorNam-Trung, Nguyen
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorWang, Jiannong
dc.date.accessioned2019-06-18T12:31:53Z
dc.date.available2019-06-18T12:31:53Z
dc.date.issued2019
dc.identifier.issn1882-0778
dc.identifier.doi10.7567/1882-0786/ab1b19
dc.identifier.urihttp://hdl.handle.net/10072/385147
dc.description.abstractWe investigated the threshold voltage (V TH) shift in p-GaN gate AlGaN/GaN power HEMTs under both forward and reverse gate bias conditions at different temperatures. With increasing forward gate bias, the V TH first positively shifted and then decreased. While at the reverse gate bias, V TH shifts monotonically increased towards the positive direction. Positive V TH shifts were due to electron trapping while its decrease was attributed to the optical pumping by the internal electroluminescence (EL). The EL emission from the p-GaN gate region was captured. A light illumination test was performed to verify the effectiveness of optical pumping.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherIOP PUBLISHING LTD
dc.relation.ispartofissue6
dc.relation.ispartofjournalAPPLIED PHYSICS EXPRESS
dc.relation.ispartofvolume12
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchcode02
dc.titleImpact of carrier injections on the threshold voltage in p-GaN gate AIGaN/GaN power HEMTs
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.hasfulltextNo Full Text
gro.griffith.authorHan, Jisheng
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorLi, Hui
gro.griffith.authorNguyen, Nam-Trung


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