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dc.contributor.authorXiao, Xingyu
dc.contributor.authorLiu, Liangliang
dc.contributor.authorMa, Junhao
dc.contributor.authorRen, Yuan
dc.contributor.authorCheng, Xiaowei
dc.contributor.authorZhu, Yongheng
dc.contributor.authorZhao, Dongyuan
dc.contributor.authorElzatahry, Ahmed A
dc.contributor.authorAlghamdi, Abdulaziz
dc.contributor.authorDeng, Yonghui
dc.date.accessioned2019-09-16T04:20:25Z
dc.date.available2019-09-16T04:20:25Z
dc.date.issued2018
dc.identifier.issn1944-8244
dc.identifier.doi10.1021/acsami.7b18830
dc.identifier.urihttp://hdl.handle.net/10072/387341
dc.description.abstractOwing to their distinct chemical and physical properties, mesoporous metal oxide semiconductors have shown great application potential in catalysis, electrochemistry, energy conversion, and energy storage. In this study, mesoporous crystalline SnO2 materials have been synthesized through an evaporation-induced co-assembly (EICA) method using poly(ethylene oxide)-b-polystyrene diblock copolymers as the template, tin chlorides as the tin sources, and tetrahydrofuran as the solvent. By controlling conditions of the co-assembly process and employing a carbon-supported thermal treatment strategy, highly ordered mesoporous SnO2 materials with a hexagonal mesostructure (space group P63/mmc) and crystalline pore walls can be obtained. The mesoporous SnO2 is employed for fabricating gas sensor nanodevices which exhibit an excellent sensing performance toward H2S with high sensitivity (170, 50 ppm) and superior stability, owing to its high surface area (98 m2/g), well-connected mesopores of ca. 18.0 nm, and high density of active sites in the crystalline pore walls. The chemical mechanism study reveals that both SO2 and SnS2 are generated during the gas sensing process on the SnO2-based sensors.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Chemical Society (ACS Publications)
dc.relation.ispartofpagefrom1871
dc.relation.ispartofpageto1880
dc.relation.ispartofissue2
dc.relation.ispartofjournalACS Applied Materials & Interfaces
dc.relation.ispartofvolume10
dc.subject.fieldofresearchChemical sciences
dc.subject.fieldofresearchMacromolecular and materials chemistry
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode34
dc.subject.fieldofresearchcode3403
dc.subject.fieldofresearchcode40
dc.subject.keywordsScience & Technology
dc.subject.keywordsTechnology
dc.subject.keywordsNanoscience & Nanotechnology
dc.subject.keywordsMaterials Science, Multidisciplinary
dc.subject.keywordsScience & Technology - Other Topics
dc.titleOrdered Mesoporous Tin Oxide Semiconductors with Large Pores and Crystallized Walls for High-Performance Gas Sensing
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationXiao, X; Liu, L; Ma, J; Ren, Y; Cheng, X; Zhu, Y; Zhao, D; Elzatahry, AA; Alghamdi, A; Deng, Y, Ordered Mesoporous Tin Oxide Semiconductors with Large Pores and Crystallized Walls for High-Performance Gas Sensing, ACS Applied Materials & Interfaces, 2018, 10 (2), pp. 1871-1880
dc.date.updated2019-09-16T04:19:06Z
gro.hasfulltextNo Full Text
gro.griffith.authorZhao, Dongyuan


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