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dc.contributor.authorNicholls, Jordan
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorTanner, Philip
dc.contributor.authorHan, Jisheng
dc.date.accessioned2019-09-17T00:49:25Z
dc.date.available2019-09-17T00:49:25Z
dc.date.issued2019
dc.identifier.issn2045-2322
dc.identifier.doi10.1038/s41598-019-40287-1
dc.identifier.urihttp://hdl.handle.net/10072/387382
dc.description.abstractAttempts to model the current through Schottky barrier diodes using the two fundamental mechanisms of thermionic emission and tunnelling are adversely impacted by defects and second order effects. This has led to the publication of countless different models to account for these effects, including some with non-physical parameters. Recently, we have developed silicon carbide Schottky barrier diodes that do not suffer from second order effects, such as excessive leakage, carrier generation and recombination, and non-uniform barrier height. In this paper, we derive the foundational current equations to establish clear links between the fundamental current mechanisms and the governing parameters. Comparing these equations with measured current–voltage characteristics, we show that the fundamental equations for tunnelling and thermionic emission can accurately model 4H silicon carbide Schottky barrier diodes over a large temperature and voltage range. Based on the obtained results, we discuss implications and misconceptions regarding barrier inhomogeneity, barrier height measurement, and reverse-bias temperature dependencies.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherNature Publishing Group
dc.relation.ispartofissue1
dc.relation.ispartofjournalScientific Reports
dc.relation.ispartofvolume9
dc.subject.fieldofresearchBiochemistry and Cell Biology
dc.subject.fieldofresearchOther Physical Sciences
dc.subject.fieldofresearchcode0601
dc.subject.fieldofresearchcode0299
dc.subject.keywordsScience & Technology
dc.subject.keywordsMultidisciplinary Sciences
dc.subject.keywordsScience & Technology - Other Topics
dc.subject.keywordsTHERMIONIC-FIELD EMISSION
dc.subject.keywordsRICHARDSON CONSTANT
dc.titleDescription and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationNicholls, J; Dimitrijev, S; Tanner, P; Han, J, Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes, Scientific Reports, 2019, 9 (1)
dcterms.dateAccepted2019-02-08
dcterms.licensehttp://creativecommons.org/licenses/by/4.0/
dc.date.updated2019-09-17T00:44:46Z
dc.description.versionPublished
gro.rights.copyright© The Author(s) 2019. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
gro.hasfulltextFull Text
gro.griffith.authorHan, Jisheng
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorTanner, Philip G.
gro.griffith.authorNicholls, Jordan R.


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