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  • Comprehensive Design Considerations and Noise Modeling of Preamplifier for MEMS Electrometry

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    Accepted Manuscript (AM)
    Author(s)
    Jalil, Jubayer
    Ruan, Yong
    Li, Huaizhong
    Zhu, Yong
    Griffith University Author(s)
    Li, Huaizhong
    Jalil, Jubayer
    Zhu, Yong
    Year published
    2020
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    Abstract
    The purpose of the work is to evaluate various intrinsic noise sources that limit the charge resolution of microelectromechanical systems (MEMS) vibrating-reed (VR) electrometers. We demonstrate a method of reducing total equivalent referred-to-input (RTI) noise voltage per square root hertz for an operational amplifier based preamplifier (preamp) circuit topology. The proposed circuit’s noise model accurately describes the various noise sources and total RTI noise voltage is experimentally verified. The noise analysis clarifies the path toward a preamp with a noise floor limited by thermal noise due to low valued shunt ...
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    The purpose of the work is to evaluate various intrinsic noise sources that limit the charge resolution of microelectromechanical systems (MEMS) vibrating-reed (VR) electrometers. We demonstrate a method of reducing total equivalent referred-to-input (RTI) noise voltage per square root hertz for an operational amplifier based preamplifier (preamp) circuit topology. The proposed circuit’s noise model accurately describes the various noise sources and total RTI noise voltage is experimentally verified. The noise analysis clarifies the path toward a preamp with a noise floor limited by thermal noise due to low valued shunt resistance at its input. Furthermore, during the charge measurement, a variation of sensitivity occurs by changing the isolation (or DC blocking) capacitor of the preamp. This phenomenon also affects the noise performance of the circuit and the overall charge resolution for the electrometer. RTI noise voltage of 290 nV/√Hz at 5.2 kHz was measured for 50 MΩ of shunt resistor and 2 pF of isolation capacitor to implement a prototype of the complete preamp, along with the MEMS device fabricated in silicon-on-glass (SOG) process. Finally, we present a charge resolution model of the proposed SOG-MEMS electrometry system. The model’s underlying design principles reveal low noise preamps accessible to the circuit designers without tangible circuitries and after-the-fact noise measurement.
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    Journal Title
    IEEE Transactions on Instrumentation and Measurement
    DOI
    https://doi.org/10.1109/tim.2019.2930440
    Copyright Statement
    © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
    Note
    This publication has been entered into Griffith Research Online as an Advanced Online Version
    Subject
    Other physical sciences
    Electrical engineering
    Publication URI
    http://hdl.handle.net/10072/388958
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    • Journal articles

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