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dc.contributor.authorPande, P
dc.contributor.authorDimitrijev, S
dc.contributor.authorHaasmann, D
dc.contributor.authorMoghadam, HA
dc.contributor.authorTanner, P
dc.contributor.authorHan, J
dc.date.accessioned2019-12-09T01:34:25Z
dc.date.available2019-12-09T01:34:25Z
dc.date.issued2019
dc.identifier.isbn9783035713329
dc.identifier.issn0255-5476
dc.identifier.doi10.4028/www.scientific.net/MSF.963.236
dc.identifier.urihttp://hdl.handle.net/10072/389601
dc.description.abstractIn this paper we report temperature independent near-interface traps (NITs) in the gate oxide of N-type MOS capacitors. The measurements were performed by a recently developed directmeasurement technique, which detected NITs with energy levels between 0.13 eV to 0.23 eV above the bottom of conduction band. These traps are also spatially localized close to the SiC surface, as evidenced by the fact that they are not observed at measurement frequencies below 6 MHz. The temperature independence indicates that this localized defect is different from the usually observed NITs whose density is increased by temperature-bias stress.
dc.description.peerreviewedYes
dc.publisherTrans Tech Publications
dc.relation.ispartofconferencename12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)
dc.relation.ispartofconferencetitleMaterials Science Forum
dc.relation.ispartofdatefrom2018-09-02
dc.relation.ispartofdateto2018-09-06
dc.relation.ispartoflocationBirmingham, UK
dc.relation.ispartofpagefrom236
dc.relation.ispartofpageto239
dc.relation.ispartofvolume963
dc.relation.urihttp://purl.org/au-research/grants/ARC/LP150100525
dc.relation.grantIDLP150100525
dc.relation.fundersARC
dc.subject.fieldofresearchMaterials Engineering
dc.subject.fieldofresearchPhysical Chemistry (incl. Structural)
dc.subject.fieldofresearchcode0912
dc.subject.fieldofresearchcode0306
dc.titleA temperature independent effect of near-interface traps in 4H-SiС MOS capacitors
dc.typeConference output
dc.type.descriptionE1 - Conferences
dcterms.bibliographicCitationPande, P; Dimitrijev, S; Haasmann, D; Moghadam, HA; Tanner, P; Han, J, A temperature independent effect of near-interface traps in 4H-SiС MOS capacitors, Materials Science Forum, 2019, 963, pp. 236-239
dc.date.updated2019-12-03T23:29:10Z
dc.description.versionAccepted Manuscript (AM)
gro.rights.copyright© 2018 Trans Tech Publications. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorPande, Peyush
gro.griffith.authorHan, Jisheng
gro.griffith.authorHaasmann, Daniel E.
gro.griffith.authorTanner, Philip G.
gro.griffith.authorAmini Moghadam, Hamid


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