Physical Properties of N2O and NO-nitrided gate oxides grown on 4H-SiC
Author(s)
Jamet, P
Dimitrijev, S
Griffith University Author(s)
Year published
2001
Metadata
Show full item recordAbstract
N2O and NO nitridation by either annealing or direct growth of gate oxides on 4H SiC is analyzed in this letter. The analysis is based on x-ray photoelectron spectroscopy binding energies and secondary ion mass spectroscopy depth profiles of nitrogen at the SiO2-SiC interface. A clean SiO2-SiC interface is found in both NO and N2O annealed/grown samples, as opposed to the interface annealed in Ar which exhibits complex suboxides and oxide-carbon compounds. The results demonstrate that nitridation in the industry-preferred N2O ambient could be as effective as nitridation in NO, provided appropriate process optimization is performed.N2O and NO nitridation by either annealing or direct growth of gate oxides on 4H SiC is analyzed in this letter. The analysis is based on x-ray photoelectron spectroscopy binding energies and secondary ion mass spectroscopy depth profiles of nitrogen at the SiO2-SiC interface. A clean SiO2-SiC interface is found in both NO and N2O annealed/grown samples, as opposed to the interface annealed in Ar which exhibits complex suboxides and oxide-carbon compounds. The results demonstrate that nitridation in the industry-preferred N2O ambient could be as effective as nitridation in NO, provided appropriate process optimization is performed.
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Journal Title
Applied Physics Letters
Volume
79
Issue
3
Subject
Physical sciences
Engineering