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  • Giant piezoresistive effect by optoelectronic coupling in a heterojunction

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    Author(s)
    Thanh, Nguyen
    Toan, Dinh
    Foisal, Abu Riduan Md
    Hoang-Phuong, Phan
    Tuan-Khoa, Nguyen
    Nam-Trung, Nguyen
    Dzung, Viet Dao
    Griffith University Author(s)
    Dao, Dzung V.
    Dinh, Toan K.
    Nguyen, Viet Thanh T.
    Md Foisal, Abu R.
    Phan, Hoang Phuong
    Nguyen Tuan, Khoa
    Nguyen, Nam-Trung
    Year published
    2019
    Metadata
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    Abstract
    Enhancing the piezoresistive effect is crucial for improving the sensitivity of mechanical sensors. Herein, we report that the piezoresistive effect in a semiconductor heterojunction can be enormously enhanced via optoelectronic coupling. A lateral photovoltage, which is generated in the top material layer of a heterojunction under non-uniform illumination, can be coupled with an optimally tuned electric current to modulate the magnitude of the piezoresistive effect. We demonstrate a tuneable giant piezoresistive effect in a cubic silicon carbide/silicon heterojunction, resulting in an extraordinarily high gauge factor of ...
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    Enhancing the piezoresistive effect is crucial for improving the sensitivity of mechanical sensors. Herein, we report that the piezoresistive effect in a semiconductor heterojunction can be enormously enhanced via optoelectronic coupling. A lateral photovoltage, which is generated in the top material layer of a heterojunction under non-uniform illumination, can be coupled with an optimally tuned electric current to modulate the magnitude of the piezoresistive effect. We demonstrate a tuneable giant piezoresistive effect in a cubic silicon carbide/silicon heterojunction, resulting in an extraordinarily high gauge factor of approximately 58,000, which is the highest gauge factor reported for semiconductor-based mechanical sensors to date. This gauge factor is approximately 30,000 times greater than that of commercial metal strain gauges and more than 2,000 times greater than that of cubic silicon carbide. The phenomenon discovered can pave the way for the development of ultra-sensitive sensor technology.
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    Journal Title
    Nature Communications
    Volume
    10
    Issue
    1
    DOI
    https://doi.org/10.1038/s41467-019-11965-5
    Copyright Statement
    © The Author(s) 2019. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
    Subject
    Engineering
    Science & Technology
    Multidisciplinary Sciences
    Science & Technology - Other Topics
    STRAIN
    Publication URI
    http://hdl.handle.net/10072/391497
    Collection
    • Journal articles

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