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dc.contributor.authorXiao, Shaoqing
dc.contributor.authorXiao, Peng
dc.contributor.authorZhang, Xuecheng
dc.contributor.authorYan, Dawei
dc.contributor.authorGu, Xiaofeng
dc.contributor.authorQin, Fang
dc.contributor.authorNi, Zhenhua
dc.contributor.authorHan, Zhao Jun
dc.contributor.authorOstrikov, Kostya Ken
dc.date.accessioned2020-02-27T03:11:37Z
dc.date.available2020-02-27T03:11:37Z
dc.date.issued2016
dc.identifier.issn2045-2322
dc.identifier.doi10.1038/srep19945
dc.identifier.urihttp://hdl.handle.net/10072/391961
dc.description.abstractTransition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes and may be applicable for a broader range of 2D materials and intended device applications.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherNature Publishing Group
dc.relation.ispartofissue1
dc.relation.ispartofjournalScientific Reports
dc.relation.ispartofvolume6
dc.subject.fieldofresearchBiochemistry and Cell Biology
dc.subject.fieldofresearchOther Physical Sciences
dc.subject.fieldofresearchcode0601
dc.subject.fieldofresearchcode0299
dc.subject.keywordsScience & Technology
dc.subject.keywordsMultidisciplinary Sciences
dc.subject.keywordsScience & Technology - Other Topics
dc.subject.keywordsLARGE-AREA SYNTHESIS
dc.subject.keywordsMONOLAYER MOS2
dc.titleAtomic-layer soft plasma etching of MoS2
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationXiao, S; Xiao, P; Zhang, X; Yan, D; Gu, X; Qin, F; Ni, Z; Han, ZJ; Ostrikov, KK, Atomic-layer soft plasma etching of MoS2, Scientific Reports, 2016, 6 (1)
dcterms.dateAccepted2015-12-18
dcterms.licensehttp://creativecommons.org/licenses/by/4.0/
dc.date.updated2020-02-27T03:09:05Z
dc.description.versionVersion of Record (VoR)
gro.rights.copyright© The Author(s) 2016. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
gro.hasfulltextFull Text
gro.griffith.authorOstrikov, Kostya (Ken)


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