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dc.contributor.authorTang, Xi
dc.contributor.authorLi, Baikui
dc.contributor.authorZhang, Jun
dc.contributor.authorLi, Hui
dc.contributor.authorHan, Jisheng
dc.contributor.authorNam-Trung, Nguyen
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorWang, Jiannong
dc.date.accessioned2020-03-19T06:14:56Z
dc.date.available2020-03-19T06:14:56Z
dc.date.issued2019
dc.identifier.isbn9781728105796
dc.identifier.issn1063-6854
dc.identifier.doi10.1109/ISPSD.2019.8757614
dc.identifier.urihttp://hdl.handle.net/10072/392483
dc.description.abstractIn this work, we demonstrated the electron/hole injections in the gate of p-GaN/AlGaN/GaN power transistors at forward gate bias by capturing the electroluminescence (EL) emission from the gate region. The EL included both visible and ultraviolet (UV) luminescence. The dynamic switching tests were carried out to investigate the effect of electron and hole injections on device performances. The electron injection and trapping at the forward gate bias caused positive threshold voltage shift, while the injection of holes into the GaN channel induced the emission of the UV light and the resulting leakage current increase in the device.
dc.languageEnglish
dc.publisherIEEE
dc.relation.ispartofconferencename31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
dc.relation.ispartofconferencetitle2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)
dc.relation.ispartofdatefrom2019-05-19
dc.relation.ispartofdateto2019-05-23
dc.relation.ispartoflocationShanghai, PEOPLES R CHINA
dc.relation.ispartofpagefrom415
dc.relation.ispartofpageto418
dc.relation.ispartofvolume2019-May
dc.subject.fieldofresearchOptical Physics
dc.subject.fieldofresearchClassical Physics
dc.subject.fieldofresearchcode0205
dc.subject.fieldofresearchcode0203
dc.subject.keywordsScience & Technology
dc.subject.keywordsComputer Science, Hardware & Architecture
dc.subject.keywordsEngineering, Electrical & Electronic
dc.titleDemonstration of Electron/Hole Injections in the Gate of p-GaN/AlGaN/GaN Power Transistors and Their Effect on Device Dynamic Performance
dc.typeConference output
dc.type.descriptionE2 - Conferences (Non Refereed)
dcterms.bibliographicCitationTang, X; Li, B; Zhang, J; Li, H; Han, J; Nam-Trung, N; Dimitrijev, S; Wang, J, Demonstration of Electron/Hole Injections in the Gate of p-GaN/AlGaN/GaN Power Transistors and Their Effect on Device Dynamic Performance, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, 2019-May, pp. 415-418
dc.date.updated2020-03-19T06:12:41Z
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorNguyen, Nam-Trung
gro.griffith.authorLi, Hui
gro.griffith.authorHan, Jisheng
gro.griffith.authorZhang, Jun
gro.griffith.authorTang, Xiao-yan


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