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  • Lithography and Etching-Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

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    Nguyen356700-Accepted.pdf (1.601Mb)
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    Accepted Manuscript (AM)
    Author(s)
    Tuan-Khoa, Nguyen
    Hoang-Phuong, Phan
    Dowling, Karen M
    Yalamarthy, Ananth Saran
    Toan, Dinh
    Balakrishnan, Vivekananthan
    Liu, Tanya
    Chapin, Caitlin A
    Quoc-Dung, Truong
    Van, Thanh Dau
    Goodson, Kenneth E
    Senesky, Debbie G
    Dzung, Viet Dao
    Nam-Trung, Nguyen
    Griffith University Author(s)
    Dau, Van
    Nguyen, Nam-Trung
    Dao, Dzung V.
    Nguyen Tuan, Khoa
    Year published
    2020
    Metadata
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    Abstract
    Silicon carbide (SiC)-based microsystems are promising alternatives for silicon-based counterparts in a wide range of applications aiming at conditions of high temperature, high corrosion, and extreme vibration/shock. However, its high resistance to chemical substances makes the fabrication of SiC particularly challenging and less cost-effective. To date, most SiC micromachining processes require time-consuming and high-cost SiC dry-etching steps followed by metal wet etching, which slows down the prototyping and characterization process of SiC devices. This work presents a lithography and etching-free microfabrication for ...
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    Silicon carbide (SiC)-based microsystems are promising alternatives for silicon-based counterparts in a wide range of applications aiming at conditions of high temperature, high corrosion, and extreme vibration/shock. However, its high resistance to chemical substances makes the fabrication of SiC particularly challenging and less cost-effective. To date, most SiC micromachining processes require time-consuming and high-cost SiC dry-etching steps followed by metal wet etching, which slows down the prototyping and characterization process of SiC devices. This work presents a lithography and etching-free microfabrication for 3C-SiC on insulator-based microelectromechanical systems (MEMS) devices. In particular, a direct laser ablation technique to replace the conventional lithography and etching processes to form functional SiC devices from 3C-SiC-on-glass wafers is used. Utilizing a single line-cutting mode, both metal contact shapes and SiC microstructures can be patterned simultaneously with a remarkably fast speed of over 20 cm s−1. As a proof of concept, several SiC microdevices, including temperature sensors, strain sensors, and microheaters, are demonstrated, showing the potential of the proposed technique for rapid and reliable prototyping of SiC-based MEMS.
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    Journal Title
    Advanced Engineering Materials
    Volume
    22
    Issue
    4
    DOI
    https://doi.org/10.1002/adem.201901173
    Copyright Statement
    © 2020 Wiley-Liss, Inc. This is the peer reviewed version of the following article: Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation , Advanced Engineering Materials, 2020, 22 (4), pp. 1901173:1-1901173:7, which has been published in final form at https://doi.org/10.1002/adem.201901173. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving (http://olabout.wiley.com/WileyCDA/Section/id-828039.html)
    Subject
    Materials engineering
    Electronic sensors
    Nanotechnology
    Nanomaterials
    Science & Technology
    Materials Science, Multidisciplinary
    Materials Science
    force sensors
    Publication URI
    http://hdl.handle.net/10072/395331
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    • Journal articles

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