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dc.contributor.authorQamar, Afzaal
dc.contributor.authorHoang-Phuong, Phan
dc.contributor.authorToan, Dinh
dc.contributor.authorNam-Trung, Nguyen
dc.contributor.authorRais-Zadeh, Mina
dc.date.accessioned2020-07-15T01:07:50Z
dc.date.available2020-07-15T01:07:50Z
dc.date.issued2020
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/5.0004943
dc.identifier.urihttp://hdl.handle.net/10072/395403
dc.description.abstractThis paper reports on a platform for monolithic integration of piezoelectric and piezoresistive devices on a single chip using the ScAlN/3C-SiC/Si heterostructure. Surface acoustic wave devices with an electromechanical coupling of 3.2% and an out-of-band rejection as high as 18 dB are demonstrated using the excellent piezoelectric properties of ScAlN and low acoustic loss of 3C-SiC. Additionally, a large piezoresistive effect in the low-doped n-type 3C-SiC(100) thin film has been observed, which exceeds the previously reported values in any SiC thin films. The growth of the n-type 3C-SiC thin film was performed using the low pressure chemical vapor deposition technique at 1250 °C and the standard micro-electro-mechanical systems process is used for the fabrication of 3C-SiC piezoresistors. The piezoresistive effect was measured using the bending beam method in different crystallographic orientations. The maximum gauge factor is -47 for the longitudinal [100] orientation. Using the longitudinal and transverse gauge factors for different crystallographic orientations, the fundamental piezoresistive coefficients of the low-doped n-type 3C-SiC thin film are measured to be π 11 = (- 14.5 ± 1.3) × 10 - 11 Pa-1, π 12 = (5.5 ± 0.5) × 10 - 11 Pa-1, and π 44 = (- 1.7 ± 0.7) × 10 - 11 Pa-1,.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.ispartofpagefrom132902:1
dc.relation.ispartofpageto132902:5
dc.relation.ispartofissue13
dc.relation.ispartofjournalApplied Physics Letters
dc.relation.ispartofvolume116
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchTechnology
dc.subject.fieldofresearchcode02
dc.subject.fieldofresearchcode09
dc.subject.fieldofresearchcode10
dc.subject.keywordsScience & Technology
dc.subject.keywordsPhysics, Applied
dc.subject.keywordsPhysics
dc.subject.keywordsOFFSET VOLTAGE
dc.titleScAlN/3C-SiC/Si platform for monolithic integration of highly sensitive piezoelectric and piezoresistive devices
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationQamar, A; Hoang-Phuong, P; Toan, D; Nam-Trung, N; Rais-Zadeh, M, ScAlN/3C-SiC/Si platform for monolithic integration of highly sensitive piezoelectric and piezoresistive devices, Applied Physics Letters, 2020, 116 (13), pp. 132902:1-132902:5
dc.date.updated2020-07-15T01:02:02Z
gro.hasfulltextNo Full Text
gro.griffith.authorPhan, Hoang Phuong
gro.griffith.authorDinh, Toan K.
gro.griffith.authorNguyen, Nam-Trung


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