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  • Highly-doped SiC resonator with ultra-large tuning frequency range by Joule heating effect

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    Guzman432690-Published.pdf (1.196Mb)
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    Author(s)
    Guzman, Pablo
    Dinh, Toan
    Phan, Hoang-Phuong
    Joy, Abbin Perunnilathil
    Qamar, Afzaal
    Bahreyni, Behraad
    Zhu, Yong
    Rais-Zadeh, Mina
    Li, Huaizhong
    Nguyen, Nam-Trung
    Dao, Dzung Viet
    Griffith University Author(s)
    Zhu, Yong
    Li, Huaizhong
    Nguyen, Nam-Trung
    Dao, Dzung V.
    Year published
    2020
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    Abstract
    Tuning the natural frequency of a resonator is an innovative approach for the implementation of mechanical resonators in a broad range of fields such as timing applications, filters or sensors. The conventional electrothermal technique is not favorable towards large tuning range because of its reliance on metallic heating elements. The use of metallic heaters could limit the tuning capability due to the mismatch in thermal expansion coefficients of materials forming the resonator. To solve this drawback, herein, the design, fabrication, and testing of a highly-doped SiC bridge resonator that excludes the use of metallic ...
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    Tuning the natural frequency of a resonator is an innovative approach for the implementation of mechanical resonators in a broad range of fields such as timing applications, filters or sensors. The conventional electrothermal technique is not favorable towards large tuning range because of its reliance on metallic heating elements. The use of metallic heaters could limit the tuning capability due to the mismatch in thermal expansion coefficients of materials forming the resonator. To solve this drawback, herein, the design, fabrication, and testing of a highly-doped SiC bridge resonator that excludes the use of metallic material as a heating element has been proposed. Instead, free-standing SiC structure functions as the mechanical resonant component as well as the heating element. Through the use of the Joule heating effect, a frequency tuning capability of almost ∆f/fo ≈ 80% has been demonstrated. The proposed device also exhibited a wide operating frequency range from 72.3 kHz to 14.5 kHz. Our SiC device enables the development of highly sensitive resonant-based sensors, especially in harsh environments.
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    Journal Title
    Materials & Design
    Volume
    194
    Issue
    108922
    DOI
    https://doi.org/10.1016/j.matdes.2020.108922
    Copyright Statement
    © 2020 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits unrestricted, non-commercial use, distribution and reproduction in any medium, providing that the work is properly cited.
    Subject
    Manufacturing engineering
    Materials engineering
    Mechanical engineering
    Science & Technology
    Materials Science, Multidisciplinary
    Materials Science
    MEMS resonator
    Publication URI
    http://hdl.handle.net/10072/398127
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