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dc.contributor.authorGuzman, Pablo
dc.contributor.authorDinh, Toan
dc.contributor.authorPhan, Hoang-Phuong
dc.contributor.authorJoy, Abbin Perunnilathil
dc.contributor.authorQamar, Afzaal
dc.contributor.authorBahreyni, Behraad
dc.contributor.authorZhu, Yong
dc.contributor.authorRais-Zadeh, Mina
dc.contributor.authorLi, Huaizhong
dc.contributor.authorNguyen, Nam-Trung
dc.contributor.authorDao, Dzung Viet
dc.date.accessioned2020-10-06T06:03:40Z
dc.date.available2020-10-06T06:03:40Z
dc.date.issued2020
dc.identifier.issn0264-1275
dc.identifier.doi10.1016/j.matdes.2020.108922
dc.identifier.urihttp://hdl.handle.net/10072/398127
dc.description.abstractTuning the natural frequency of a resonator is an innovative approach for the implementation of mechanical resonators in a broad range of fields such as timing applications, filters or sensors. The conventional electrothermal technique is not favorable towards large tuning range because of its reliance on metallic heating elements. The use of metallic heaters could limit the tuning capability due to the mismatch in thermal expansion coefficients of materials forming the resonator. To solve this drawback, herein, the design, fabrication, and testing of a highly-doped SiC bridge resonator that excludes the use of metallic material as a heating element has been proposed. Instead, free-standing SiC structure functions as the mechanical resonant component as well as the heating element. Through the use of the Joule heating effect, a frequency tuning capability of almost ∆f/fo ≈ 80% has been demonstrated. The proposed device also exhibited a wide operating frequency range from 72.3 kHz to 14.5 kHz. Our SiC device enables the development of highly sensitive resonant-based sensors, especially in harsh environments.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherElsevier
dc.relation.ispartofissue108922
dc.relation.ispartofjournalMaterials & Design
dc.relation.ispartofvolume194
dc.subject.fieldofresearchManufacturing engineering
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchMechanical engineering
dc.subject.fieldofresearchcode4014
dc.subject.fieldofresearchcode4016
dc.subject.fieldofresearchcode4017
dc.subject.keywordsScience & Technology
dc.subject.keywordsMaterials Science, Multidisciplinary
dc.subject.keywordsMaterials Science
dc.subject.keywordsMEMS resonator
dc.titleHighly-doped SiC resonator with ultra-large tuning frequency range by Joule heating effect
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationGuzman, P; Toan, D; Hoang-Phuong, P; Joy, AP; Qamar, A; Bahreyni, B; Zhu, Y; Rais-Zadeh, M; Li, H; Nam-Trung, N; Dzung, VD, Highly-doped SiC resonator with ultra-large tuning frequency range by Joule heating effect, Materials & Design, 2020, 194, pp. 108922
dcterms.licensehttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.date.updated2020-10-06T02:17:21Z
dc.description.versionVersion of Record (VoR)
gro.rights.copyright© 2020 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits unrestricted, non-commercial use, distribution and reproduction in any medium, providing that the work is properly cited.
gro.hasfulltextFull Text
gro.griffith.authorZhu, Yong
gro.griffith.authorDinh, Toan K.
gro.griffith.authorPhan, Hoang Phuong
gro.griffith.authorLi, Huaizhong
gro.griffith.authorNguyen, Nam-Trung
gro.griffith.authorDao, Dzung V.
gro.griffith.authorGuzman Duran, Pablo A.


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