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  • Effect of the surface oxide layer on the stability of black phosphorus

    Author(s)
    Nan, H
    Wang, X
    Jiang, J
    (Ken) Ostrikov, K
    Ni, Z
    Gu, X
    Xiao, S
    Griffith University Author(s)
    Ostrikov, Ken
    Year published
    2021
    Metadata
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    Abstract
    It has been a long-standing challenge to produce air-stable few-layer black phosphorus (BP) because BP degrade rapidly in ambient atmosphere. Here we demonstrate that the pristine BP with ten layers or more possesses a strong stability and can be stored in air for two weeks. The physical mechanism can be ascribed to the native phosphorus oxide formed on the surface, which act as a stable and protective capping layer and prevent the underlying layer from further oxidation. The pristine 10-layer BP FET device can maintain a high mobility value of around 220 cm2 V-1s−1 in air for 2 weeks. By contrast, the plasma-induced phosphorus ...
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    It has been a long-standing challenge to produce air-stable few-layer black phosphorus (BP) because BP degrade rapidly in ambient atmosphere. Here we demonstrate that the pristine BP with ten layers or more possesses a strong stability and can be stored in air for two weeks. The physical mechanism can be ascribed to the native phosphorus oxide formed on the surface, which act as a stable and protective capping layer and prevent the underlying layer from further oxidation. The pristine 10-layer BP FET device can maintain a high mobility value of around 220 cm2 V-1s−1 in air for 2 weeks. By contrast, the plasma-induced phosphorus oxide is not dense or robust enough to protect the underlying sample from oxidation. These results suggest that the density of the oxide layer on the surface plays a vital role in the stability of BP flakes. This work offers new perspectives for probing the stability of BP based electronic and optoelectronic devices.
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    Journal Title
    Applied Surface Science
    Volume
    537
    DOI
    https://doi.org/10.1016/j.apsusc.2020.147850
    Subject
    Mechanical engineering
    Publication URI
    http://hdl.handle.net/10072/400402
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    • Journal articles

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