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dc.contributor.authorPham, TA
dc.contributor.authorHold, L
dc.contributor.authorlacopi, A
dc.contributor.authorNguyen, TK
dc.contributor.authorCheng, HH
dc.contributor.authorDinh, T
dc.contributor.authorDao, DV
dc.contributor.authorTa, HT
dc.contributor.authorNguyen, NT
dc.contributor.authorPhan, HP
dc.date.accessioned2020-12-23T00:19:44Z
dc.date.available2020-12-23T00:19:44Z
dc.date.issued2021
dc.identifier.issn0924-4247
dc.identifier.doi10.1016/j.sna.2020.112474
dc.identifier.urihttp://hdl.handle.net/10072/400502
dc.description.abstractAn in-depth understanding of the formation of silicon dioxide (SiO2) on silicon carbide (SiC) in thermal oxidation is imperative for micro/nano fabrication processes, integration of electronic components, and evaluation of SiC device performance under extreme conditions. Herein, we report a comprehensive study on the effects of crystalline orientations, thicknesses, and growth temperatures of cubic SiC films on their wet oxidation properties. The oxidation rate and surface morphology were characterized using atomic force microscopy (AFM) and light reflectance measurement systems. Our experimental results revealed the role of defects in the SiC crystal on the oxidation that relates to SiC thickness, deposition conditions, crystal orientation and temperature of wet oxidation. Critically, the electrical properties of SiC films oxidized at 900 °C remained the same as the unoxidized film as confirmed by room-temperature current-voltage measurements, indicating a long-term service temperature of SiC. These findings are expected to provide crucial information on the effects of defects on the formation of SiO2 on SiC films at different oxidation temperatures, which is highly essential for establishing a basic platform for the fabrication of high-performance SiC-based electronic devices.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherElsevier
dc.relation.ispartofpagefrom112474
dc.relation.ispartofjournalSensors and Actuators, A: Physical
dc.relation.ispartofvolume317
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchNanomaterials
dc.subject.fieldofresearchNanotechnology
dc.subject.fieldofresearchElectrical engineering
dc.subject.fieldofresearchElectronics, sensors and digital hardware
dc.subject.fieldofresearchMechanical engineering
dc.subject.fieldofresearchcode4016
dc.subject.fieldofresearchcode401807
dc.subject.fieldofresearchcode4018
dc.subject.fieldofresearchcode4008
dc.subject.fieldofresearchcode4009
dc.subject.fieldofresearchcode4017
dc.titleWet oxidation of 3C-SiC on Si for MEMS processing and use in harsh environments: Effects of the film thicknesses, crystalline orientations, and growth temperatures
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationPham, TA; Hold, L; lacopi, A; Nguyen, TK; Cheng, HH; Dinh, T; Dao, DV; Ta, HT; Nguyen, NT; Phan, HP, Wet oxidation of 3C-SiC on Si for MEMS processing and use in harsh environments: Effects of the film thicknesses, crystalline orientations, and growth temperatures, Sensors and Actuators, A: Physical, 2021, 317, pp. 112474
dc.date.updated2020-12-22T23:02:21Z
gro.hasfulltextNo Full Text
gro.griffith.authorTa, Hang
gro.griffith.authorDao, Dzung V.
gro.griffith.authorNguyen, Nam-Trung
gro.griffith.authorNguyen, Khoa T.


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