Enhanced photoresponsivity of InSe photodetector by molecular doping
Author(s)
Xu, Chunyan
Zhang, Haozhe
Li, Daqing
Ostrikov, Kostya Ken
Xiao, Shaoqing
Gu, Xiaofeng
Nan, Haiyan
Griffith University Author(s)
Year published
2020
Metadata
Show full item recordAbstract
InSe has attracted significant attention because of its extraordinary properties. However, the responsivities of the devices are mainly focused in the visible range. Here, we report an InSe/hexagonal boron nitride (h-BN)-based photodetector with high responsivity and a photoresponse from a 940 to 447 nm wide response range, which is mainly due to two main techniques: (i) h-BN insertion underneath the InSe channel, and (ii) tetrafluorotetracyanoquinodimethane p-doping treatment. The method described here presents a significant step toward the achievement of next-generation high-performance photodetectors based on two-dimensional ...
View more >InSe has attracted significant attention because of its extraordinary properties. However, the responsivities of the devices are mainly focused in the visible range. Here, we report an InSe/hexagonal boron nitride (h-BN)-based photodetector with high responsivity and a photoresponse from a 940 to 447 nm wide response range, which is mainly due to two main techniques: (i) h-BN insertion underneath the InSe channel, and (ii) tetrafluorotetracyanoquinodimethane p-doping treatment. The method described here presents a significant step toward the achievement of next-generation high-performance photodetectors based on two-dimensional nanomaterials.
View less >
View more >InSe has attracted significant attention because of its extraordinary properties. However, the responsivities of the devices are mainly focused in the visible range. Here, we report an InSe/hexagonal boron nitride (h-BN)-based photodetector with high responsivity and a photoresponse from a 940 to 447 nm wide response range, which is mainly due to two main techniques: (i) h-BN insertion underneath the InSe channel, and (ii) tetrafluorotetracyanoquinodimethane p-doping treatment. The method described here presents a significant step toward the achievement of next-generation high-performance photodetectors based on two-dimensional nanomaterials.
View less >
Journal Title
Applied Physics Express
Volume
13
Issue
11
Subject
Physical sciences
Science & Technology
Physics, Applied
Physics
InSe