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  • High performance IGZO-based phototransistors by BN/BP interface engineering

    Author(s)
    Li, Daqing
    Nan, Haiyan
    Mou, Penglin
    Xu, Chunyan
    Shao, Feng
    Gu, Xiaofeng
    Ostrikov, Kostya Ken
    Xiao, Shaoqing
    Griffith University Author(s)
    Ostrikov, Ken
    Year published
    2021
    Metadata
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    Abstract
    Some advances have been achieved in developing heterojunctions consisting of indium-gallium-zinc oxide (a-IGZO) films and two dimensional (2D) van der Waals materials for optoelectronic applications in recent years, however, the improvement of IGZO channel itself via constructing such heterojunctions is rarely reported. Here, we report the huge improvement in photoresponse performances for the IGZO phototransistor devices by introducing boron nitride (BN)/black phosphorus (BP) interface engineering. By creating an appropriate band bending and an efficient photo-generated carrier transfer path between IGZO and BP, the ...
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    Some advances have been achieved in developing heterojunctions consisting of indium-gallium-zinc oxide (a-IGZO) films and two dimensional (2D) van der Waals materials for optoelectronic applications in recent years, however, the improvement of IGZO channel itself via constructing such heterojunctions is rarely reported. Here, we report the huge improvement in photoresponse performances for the IGZO phototransistor devices by introducing boron nitride (BN)/black phosphorus (BP) interface engineering. By creating an appropriate band bending and an efficient photo-generated carrier transfer path between IGZO and BP, the recombination of the photo-generated carriers in the IGZO channel is significantly suppressed. As a result, the corresponding photoresponsivity at a wavelength of 447 nm can be promoted from 0.05 A W−1 to 0.3 A W−1. A corresponding maximum external quantum efficiency of 83.4% was obtained for the BN/BP decorated IGZO phototransistor. The results imply that such interface engineering via 2D materials can be used as a general route to high performance oxide-semiconductor based optoelectronic devices.
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    Journal Title
    Nanotechnology
    Volume
    32
    Issue
    2
    DOI
    https://doi.org/10.1088/1361-6528/abba59
    Subject
    Nanotechnology
    Science & Technology
    Physical Sciences
    Materials Science, Multidisciplinary
    Nanoscience
    Publication URI
    http://hdl.handle.net/10072/400788
    Collection
    • Journal articles

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