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dc.contributor.authorJadli, Utkarsh
dc.contributor.authorMohd-Yasin, Faisal
dc.contributor.authorMoghadam, Hamid Amini
dc.contributor.authorPande, Peyush
dc.contributor.authorChaturvedi, Mayank
dc.contributor.authorDimitrijev, Sima
dc.date.accessioned2021-01-20T04:56:56Z
dc.date.available2021-01-20T04:56:56Z
dc.date.issued2021
dc.identifier.issn2079-9292
dc.identifier.doi10.3390/electronics10020130
dc.identifier.urihttp://hdl.handle.net/10072/401343
dc.description.abstractThe device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for the design and verification of power-electronic circuits. This paper shows that GaN-HEMTs can be modeled by selected equations from the standard MOSFET LEVEL 3 model in SPICE. A method is proposed for the extraction of SPICE parameters in these equations. The selected equations and the proposed parameter-extraction method are verified with measured static and dynamic characteristics of commercial GaN-HEMTs. Furthermore, a double pulse test is performed in LTSpice and compared to its manufacturer model to demonstrate the effectiveness of the MOSFET LEVEL 3 model. The advantage of the proposed approach to use the MOSFET LEVEL 3 model, in comparison to the alternative behavioral-based model provided by some manufacturers, is that users can apply the proposed method to adjust the parameters of the MOSFET LEVEL 3 model for the case of manufacturers who do not provide SPICE models for their HEMTs.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherMDPI AG
dc.relation.ispartofpagefrom130
dc.relation.ispartofissue2
dc.relation.ispartofjournalElectronics
dc.relation.ispartofvolume10
dc.subject.fieldofresearchElectrical and Electronic Engineering
dc.subject.fieldofresearchcode0906
dc.titleModeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationJadli, U; Mohd-Yasin, F; Moghadam, HA; Pande, P; Chaturvedi, M; Dimitrijev, S, Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE, Electronics, 10 (2), pp. 130
dcterms.licensehttp://creativecommons.org/licenses/by/4.0/
dc.date.updated2021-01-20T04:45:41Z
dc.description.versionVersion of Record (VoR)
gro.rights.copyright© 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorMohd-Yasin, Faisal
gro.griffith.authorJadli, Utkarsh
gro.griffith.authorChaturvedi, Mayank
gro.griffith.authorAmini Moghadam, Hamid


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