Show simple item record

dc.contributor.authorZhai, Tianyouen_US
dc.contributor.authorFang, Xiaoshengen_US
dc.contributor.authorLiao, Meiyongen_US
dc.contributor.authorXu, Xijinen_US
dc.contributor.authorLi, Liangen_US
dc.contributor.authorLiu, Baodanen_US
dc.contributor.authorKoide, Yasuoen_US
dc.contributor.authorMa, Yingen_US
dc.contributor.authorYao, Jiannianen_US
dc.contributor.authorBando, Yoshioen_US
dc.contributor.authorGolberg, Dmitrien_US
dc.date.accessioned2017-04-24T13:30:48Z
dc.date.available2017-04-24T13:30:48Z
dc.date.issued2010en_US
dc.date.modified2011-08-19T06:45:51Z
dc.identifier.issn1936-0851en_US
dc.identifier.doi10.1021/nn9012466en_AU
dc.identifier.urihttp://hdl.handle.net/10072/40172
dc.description.abstractThe synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first investigated. The electrical characterization of a single In2Se3 nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In2Se3 nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In2Se3 nanowires in next-generation sensors and detectors for commercial, military, and space applications.en_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_AU
dc.languageEnglishen_US
dc.language.isoen_AU
dc.publisherAmerican Chemical Societyen_US
dc.publisher.placeUnited Statesen_US
dc.relation.ispartofstudentpublicationNen_AU
dc.relation.ispartofpagefrom1596en_US
dc.relation.ispartofpageto1602en_US
dc.relation.ispartofissue3en_US
dc.relation.ispartofjournalACS Nanoen_US
dc.relation.ispartofvolume4en_US
dc.rights.retentionYen_AU
dc.subject.fieldofresearchCondensed Matter Physics not elsewhere classifieden_US
dc.subject.fieldofresearchCondensed Matter Characterisation Technique Developmenten_US
dc.subject.fieldofresearchcode020499en_US
dc.subject.fieldofresearchcode020401en_US
dc.titleFabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectorsen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Peer Reviewed (HERDC)en_US
dc.type.codeC - Journal Articlesen_US
gro.rights.copyrightSelf-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.en_AU
gro.date.issued2010
gro.hasfulltextNo Full Text


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

  • Journal articles
    Contains articles published by Griffith authors in scholarly journals.

Show simple item record