UV-visible-near infrared photoabsorption and photodetection using close-packed metallic gold nanoparticle network
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Author(s)
Xie, Xian Ning
Zhong, Yu Lin
Dhoni, Mohan S
Xie, Yilin
Loh, Kian Ping
Sow, Chorng Haur
Ji, Wei
Wee, Andrew Thye Shen
Griffith University Author(s)
Year published
2010
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Photocurrent generation and photodetection are usually based on semiconductor crystals including Si, CdS, and PbS. This work reports the enhanced photoabsorption and photodetection of close-packed metallic Au nanoparticles (NPs) in the UV-VIS (visible)-NIR (near infrared) region. Photoabsorption in the UV-VIS regions is associated with the interband transition and surface plasmon resonance of AuNPs, while the enhanced NIR absorption is due to the collective effect of interacting AuNPs in the close-packed network. Consequently, the AuNPs exhibits photodetection behavior in the wavelength range of 300-1500 nm. It is proposed ...
View more >Photocurrent generation and photodetection are usually based on semiconductor crystals including Si, CdS, and PbS. This work reports the enhanced photoabsorption and photodetection of close-packed metallic Au nanoparticles (NPs) in the UV-VIS (visible)-NIR (near infrared) region. Photoabsorption in the UV-VIS regions is associated with the interband transition and surface plasmon resonance of AuNPs, while the enhanced NIR absorption is due to the collective effect of interacting AuNPs in the close-packed network. Consequently, the AuNPs exhibits photodetection behavior in the wavelength range of 300-1500 nm. It is proposed that the inter-AuNP photoejection and delocalization of electron-hole pairs changes the carrier lifetime and transit dynamics in favor of photocarrier conduction, thus significantly facilitating photocurrent generation in the metallic AuNP close-pack. Moreover, due to the power-law conduction mechanism in AuNP networks, the quantum yield of AuNPs can be tuned from 10-6 to 10-1 photoelectron/photon by increasing the bias voltage from 0 to 5 V. The AuNP quantum yield of 10-1 at 5 V is as high as that of commercial Si photodetectors at 0 V, and this demonstrates the immediate applicability of AuNPs in photodetection. In view of the compatibility of AuNPs with wet-chemistry and inkjet printing processes at low temperatures, metallic AuNPs may provide a convenient alternative to semiconductor crystals in photodetection and perhaps photovoltaic applications. © 2010 American Institute of Physics.
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View more >Photocurrent generation and photodetection are usually based on semiconductor crystals including Si, CdS, and PbS. This work reports the enhanced photoabsorption and photodetection of close-packed metallic Au nanoparticles (NPs) in the UV-VIS (visible)-NIR (near infrared) region. Photoabsorption in the UV-VIS regions is associated with the interband transition and surface plasmon resonance of AuNPs, while the enhanced NIR absorption is due to the collective effect of interacting AuNPs in the close-packed network. Consequently, the AuNPs exhibits photodetection behavior in the wavelength range of 300-1500 nm. It is proposed that the inter-AuNP photoejection and delocalization of electron-hole pairs changes the carrier lifetime and transit dynamics in favor of photocarrier conduction, thus significantly facilitating photocurrent generation in the metallic AuNP close-pack. Moreover, due to the power-law conduction mechanism in AuNP networks, the quantum yield of AuNPs can be tuned from 10-6 to 10-1 photoelectron/photon by increasing the bias voltage from 0 to 5 V. The AuNP quantum yield of 10-1 at 5 V is as high as that of commercial Si photodetectors at 0 V, and this demonstrates the immediate applicability of AuNPs in photodetection. In view of the compatibility of AuNPs with wet-chemistry and inkjet printing processes at low temperatures, metallic AuNPs may provide a convenient alternative to semiconductor crystals in photodetection and perhaps photovoltaic applications. © 2010 American Institute of Physics.
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Journal Title
Journal of Applied Physics
Volume
107
Issue
5
Copyright Statement
© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics, 2010, 107 (5), pp. 053510 and may be found at https://doi.org/10.1063/1.3310367
Subject
Mathematical sciences
Physical sciences
Engineering
Science & Technology
Physics, Applied
Physics
ELECTRON-TRANSPORT