Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

View/ Open
File version
Version of Record (VoR)
Author(s)
Nguyen, HQ
Nguyen, T
Tanner, P
Nguyen, TK
Foisal, ARM
Fastier-Wooller, J
Nguyen, TH
Phan, HP
Nguyen, NT
Dao, DV
Year published
2021
Metadata
Show full item recordAbstract
We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor. We observe that the HEMT drain current exhibits a linear change of 2.5%/bar upon the application of pressure, which is translated to a strain sensitivity of 1250 ppm−1. This is the highest strain sensitivity ever reported on HEMTs and many other conventional strain sensing configurations. The relative change of drain current is largest when the gate bias is near-threshold and drain bias is slightly larger than the ...
View more >We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor. We observe that the HEMT drain current exhibits a linear change of 2.5%/bar upon the application of pressure, which is translated to a strain sensitivity of 1250 ppm−1. This is the highest strain sensitivity ever reported on HEMTs and many other conventional strain sensing configurations. The relative change of drain current is largest when the gate bias is near-threshold and drain bias is slightly larger than the saturation bias. The electron sheet density and mobility changes in the AlGaN/GaN heterointerface under the applied pressure or mechanical strain are explained qualitatively. The spontaneous and piezoelectric-polarization-induced surface and interface charges in the AlGaN/GaN heterojunction can be used to develop very sensitive and robust pressure sensors. The results demonstrate a considerable potential of normally off AlGaN/GaN HEMTs for highly sensitive and reliable mechanical sensing applications with low energy consumption.
View less >
View more >We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor. We observe that the HEMT drain current exhibits a linear change of 2.5%/bar upon the application of pressure, which is translated to a strain sensitivity of 1250 ppm−1. This is the highest strain sensitivity ever reported on HEMTs and many other conventional strain sensing configurations. The relative change of drain current is largest when the gate bias is near-threshold and drain bias is slightly larger than the saturation bias. The electron sheet density and mobility changes in the AlGaN/GaN heterointerface under the applied pressure or mechanical strain are explained qualitatively. The spontaneous and piezoelectric-polarization-induced surface and interface charges in the AlGaN/GaN heterojunction can be used to develop very sensitive and robust pressure sensors. The results demonstrate a considerable potential of normally off AlGaN/GaN HEMTs for highly sensitive and reliable mechanical sensing applications with low energy consumption.
View less >
Journal Title
Applied Physics Letters
Volume
118
Issue
24
Copyright Statement
© 2021 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2021, 118 (24), pp. 242104 and may be found at https://doi.org/10.1063/5.0053701
Subject
Physical sciences
Engineering
Electronics, sensors and digital hardware
Other engineering
Publication URI
Collection
Related items
Showing items related by title, author, creator and subject.
-
Genomic mutations and changes in protein secondary structure and solvent accessibility of SARS-CoV-2 (COVID-19 virus)
Nguyen, Thanh Thi; Pathirana, Pubudu N; Nguyen, Thin; Nguyen, Quoc Viet Hung; Bhatti, Asim; Nguyen, Dinh C; Nguyen, Dung Tien; Nguyen, Ngoc Duy; Creighton, Douglas; Abdelrazek, Mohamed (Scientific Reports, 2021)Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) is a highly pathogenic virus that has caused the global COVID-19 pandemic. Tracing the evolution and transmission of the virus is crucial to respond to and control ...JOURNAL ARTICLE -
Deep learning for deepfakes creation and detection: A survey
Nguyen, TT; Nguyen, QVH; Nguyen, DT; Nguyen, DT; Huynh-The, T; Nahavandi, S; Nguyen, TT; Pham, QV; Nguyen, CM (Computer Vision and Image Understanding, 2022)Deep learning has been successfully applied to solve various complex problems ranging from big data analytics to computer vision and human-level control. Deep learning advances however have also been employed to create ...JOURNAL ARTICLE -
The validation of organisational culture assessment instrument in healthcare setting: results from a cross-sectional study in Vietnam
Nguyen, Van Huy; Nguyen, Thi Hoai Thu; Nguyen, Le Tuan Anh; Nguyen, Thanh Hai Au; Nguyen, The Phuong; Nguyen, Thi Cham; Pham, Duc Minh (BMC Public Health, 2020)Background: Organisational culture (OC) has increasingly become a crucial factor in defining healthcare practice and management. However, there has been little research validating and adapting OCAI (organisational culture ...JOURNAL ARTICLE