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  • Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

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    Author(s)
    Nguyen, HQ
    Nguyen, T
    Tanner, P
    Nguyen, TK
    Foisal, ARM
    Fastier-Wooller, J
    Nguyen, TH
    Phan, HP
    Nguyen, NT
    Dao, DV
    Griffith University Author(s)
    Nguyen Tuan, Khoa
    Dao, Dzung V.
    Nguyen, Nam-Trung
    Tanner, Philip G.
    Year published
    2021
    Metadata
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    Abstract
    We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor. We observe that the HEMT drain current exhibits a linear change of 2.5%/bar upon the application of pressure, which is translated to a strain sensitivity of 1250 ppm−1. This is the highest strain sensitivity ever reported on HEMTs and many other conventional strain sensing configurations. The relative change of drain current is largest when the gate bias is near-threshold and drain bias is slightly larger than the ...
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    We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor. We observe that the HEMT drain current exhibits a linear change of 2.5%/bar upon the application of pressure, which is translated to a strain sensitivity of 1250 ppm−1. This is the highest strain sensitivity ever reported on HEMTs and many other conventional strain sensing configurations. The relative change of drain current is largest when the gate bias is near-threshold and drain bias is slightly larger than the saturation bias. The electron sheet density and mobility changes in the AlGaN/GaN heterointerface under the applied pressure or mechanical strain are explained qualitatively. The spontaneous and piezoelectric-polarization-induced surface and interface charges in the AlGaN/GaN heterojunction can be used to develop very sensitive and robust pressure sensors. The results demonstrate a considerable potential of normally off AlGaN/GaN HEMTs for highly sensitive and reliable mechanical sensing applications with low energy consumption.
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    Journal Title
    Applied Physics Letters
    Volume
    118
    Issue
    24
    DOI
    https://doi.org/10.1063/5.0053701
    Copyright Statement
    © 2021 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2021, 118 (24), pp. 242104 and may be found at https://doi.org/10.1063/5.0053701
    Subject
    Physical sciences
    Engineering
    Electronics, sensors and digital hardware
    Other engineering
    Publication URI
    http://hdl.handle.net/10072/406243
    Collection
    • Journal articles

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