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dc.contributor.authorNguyen, HQ
dc.contributor.authorNguyen, T
dc.contributor.authorTanner, P
dc.contributor.authorNguyen, TK
dc.contributor.authorFoisal, ARM
dc.contributor.authorFastier-Wooller, J
dc.contributor.authorNguyen, TH
dc.contributor.authorPhan, HP
dc.contributor.authorNguyen, NT
dc.contributor.authorDao, DV
dc.date.accessioned2021-07-23T03:52:16Z
dc.date.available2021-07-23T03:52:16Z
dc.date.issued2021
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/5.0053701
dc.identifier.urihttp://hdl.handle.net/10072/406243
dc.description.abstractWe report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor. We observe that the HEMT drain current exhibits a linear change of 2.5%/bar upon the application of pressure, which is translated to a strain sensitivity of 1250 ppm−1. This is the highest strain sensitivity ever reported on HEMTs and many other conventional strain sensing configurations. The relative change of drain current is largest when the gate bias is near-threshold and drain bias is slightly larger than the saturation bias. The electron sheet density and mobility changes in the AlGaN/GaN heterointerface under the applied pressure or mechanical strain are explained qualitatively. The spontaneous and piezoelectric-polarization-induced surface and interface charges in the AlGaN/GaN heterojunction can be used to develop very sensitive and robust pressure sensors. The results demonstrate a considerable potential of normally off AlGaN/GaN HEMTs for highly sensitive and reliable mechanical sensing applications with low energy consumption.
dc.description.peerreviewedYes
dc.languageen
dc.publisherAIP Publishing
dc.relation.ispartofpagefrom242104
dc.relation.ispartofissue24
dc.relation.ispartofjournalApplied Physics Letters
dc.relation.ispartofvolume118
dc.subject.fieldofresearchPhysical sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchElectronics, sensors and digital hardware
dc.subject.fieldofresearchOther engineering
dc.subject.fieldofresearchcode51
dc.subject.fieldofresearchcode40
dc.subject.fieldofresearchcode4009
dc.subject.fieldofresearchcode4099
dc.titlePiezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationNguyen, HQ; Nguyen, T; Tanner, P; Nguyen, TK; Foisal, ARM; Fastier-Wooller, J; Nguyen, TH; Phan, HP; Nguyen, NT; Dao, DV, Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor, Applied Physics Letters, 2021, 118 (24), pp. 242104
dc.date.updated2021-07-20T23:33:22Z
dc.description.versionVersion of Record (VoR)
gro.rights.copyright© 2021 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2021, 118 (24), pp. 242104 and may be found at https://doi.org/10.1063/5.0053701
gro.hasfulltextFull Text
gro.griffith.authorNguyen Tuan, Khoa
gro.griffith.authorDao, Dzung V.
gro.griffith.authorPhan, Hoang Phuong
gro.griffith.authorFastier-Wooller, Jarred W.
gro.griffith.authorNguyen, Viet Thanh T.
gro.griffith.authorNguyen, Nam-Trung
gro.griffith.authorNguyen, Hung T.
gro.griffith.authorTanner, Philip G.


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