• myGriffith
    • Staff portal
    • Contact Us⌄
      • Future student enquiries 1800 677 728
      • Current student enquiries 1800 154 055
      • International enquiries +61 7 3735 6425
      • General enquiries 07 3735 7111
      • Online enquiries
      • Staff phonebook
    View Item 
    •   Home
    • Griffith Research Online
    • Journal articles
    • View Item
    • Home
    • Griffith Research Online
    • Journal articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

  • All of Griffith Research Online
    • Communities & Collections
    • Authors
    • By Issue Date
    • Titles
  • This Collection
    • Authors
    • By Issue Date
    • Titles
  • Statistics

  • Most Popular Items
  • Statistics by Country
  • Most Popular Authors
  • Support

  • Contact us
  • FAQs
  • Admin login

  • Login
  • Deepening the Valance Band Edges of NiOx Contacts by Alkaline Earth Metal Doping for Efficient Perovskite Photovoltaics with High Open-Circuit Voltage

    Author(s)
    Ge, B
    Qiao, HW
    Lin, ZQ
    Zhou, ZR
    Chen, AP
    Yang, S
    Hou, Y
    Yang, HG
    Griffith University Author(s)
    Yang, Huagui
    Year published
    2019
    Metadata
    Show full item record
    Abstract
    Organometallic halide perovskite solar cells (PSCs) are rapidly evolving as the promising photovoltaic technologies with high record efficiency over 24%. The inorganic p-type semiconductor NiOx is extensively used as important hole transport layers for the realization of stable and hysteresis-free solar cells due to their good electronic properties, facile fabrication, and excellent chemical endurance. However, the critical issues of NiOx films including poor intrinsic conductivity and mismatched band alignment limit further improvement of the device performance. Herein, it is demonstrated that a versatile alkaline earth ...
    View more >
    Organometallic halide perovskite solar cells (PSCs) are rapidly evolving as the promising photovoltaic technologies with high record efficiency over 24%. The inorganic p-type semiconductor NiOx is extensively used as important hole transport layers for the realization of stable and hysteresis-free solar cells due to their good electronic properties, facile fabrication, and excellent chemical endurance. However, the critical issues of NiOx films including poor intrinsic conductivity and mismatched band alignment limit further improvement of the device performance. Herein, it is demonstrated that a versatile alkaline earth metal (Mg, Ca, Sr, and Ba) doping strategy can effectively engineer the electronic properties of NiOx contacts in inverted planar PSCs. Alkaline earth metal doping can deepen valence band maximum and enhance the hole conductivity of NiOx films, which better aligns the energy band in solar cells. The champion device based on Sr-doped NiOx films attains a power conversion efficiency of 19.49% with a high open-circuit voltage (VOC) of 1.14 V for NiOx-based CH3NH3PbI3 devices. The resulted device shows negligible hysteresis and high stability as well. This finding provides a systematic doping strategy to further improve the performance of inverted planar PSCs.
    View less >
    Journal Title
    Solar RRL
    Volume
    3
    Issue
    8
    DOI
    https://doi.org/10.1002/solr.201900192
    Subject
    Environmental engineering
    Publication URI
    http://hdl.handle.net/10072/406710
    Collection
    • Journal articles

    Footer

    Disclaimer

    • Privacy policy
    • Copyright matters
    • CRICOS Provider - 00233E

    Tagline

    • Gold Coast
    • Logan
    • Brisbane - Queensland, Australia
    First Peoples of Australia
    • Aboriginal
    • Torres Strait Islander