Show simple item record

dc.contributor.authorChaturvedi, Mayank
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorMoghadam, Hamid Amini
dc.contributor.authorHaasmann, Daniel
dc.contributor.authorPande, Peyush
dc.contributor.authorJadli, Utkarsh
dc.date.accessioned2021-08-23T00:44:17Z
dc.date.available2021-08-23T00:44:17Z
dc.date.issued2021
dc.identifier.issn2169-3536
dc.identifier.doi10.1109/ACCESS.2021.3102614
dc.identifier.urihttp://hdl.handle.net/10072/407146
dc.description.abstractOxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of charging and discharging voltages across MOS capacitors in response to high-frequency voltage pulses. This method can identify traps with response times in the order of hundreds of nanoseconds. The results reveal an increasing density of near-interface traps with energy levels above the bottom of the conduction band, which are the active defects reducing the channel-carrier mobility in 4H-SiC MOSFETs.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherIEEE
dc.relation.ispartofpagefrom109745
dc.relation.ispartofpageto109753
dc.relation.ispartofjournalIEEE Access
dc.relation.ispartofvolume9
dc.subject.fieldofresearchInformation and computing sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchElectrical engineering
dc.subject.fieldofresearchOther engineering
dc.subject.fieldofresearchcode46
dc.subject.fieldofresearchcode40
dc.subject.fieldofresearchcode4008
dc.subject.fieldofresearchcode4099
dc.subject.keywordsScience & Technology
dc.subject.keywordsTelecommunications
dc.subject.keywordsInformation Systems
dc.titleFast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationChaturvedi, M; Dimitrijev, S; Moghadam, HA; Haasmann, D; Pande, P; Jadli, U, Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method, IEEE Access, 2021, 9, pp. 109745-109753
dcterms.licensehttp://creativecommons.org/licenses/by/4.0/
dc.date.updated2021-08-20T02:11:46Z
dc.description.versionVersion of Record (VoR)
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorHaasmann, Daniel E.
gro.griffith.authorJadli, Utkarsh
gro.griffith.authorChaturvedi, Mayank
gro.griffith.authorAmini Moghadam, Hamid


Files in this item

This item appears in the following Collection(s)

  • Journal articles
    Contains articles published by Griffith authors in scholarly journals.

Show simple item record