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  • A Method for Selection of Power MOSFETs to Minimize Power Dissipation

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    Jadli512169-Published.pdf (2.438Mb)
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    Version of Record (VoR)
    Author(s)
    Jadli, Utkarsh
    Mohd-Yasin, Faisal
    Moghadam, Hamid Amini
    Pande, Peyush
    Chaturvedi, Mayank
    Dimitrijev, Sima
    Griffith University Author(s)
    Mohd-Yasin, Faisal
    Jadli, Utkarsh
    Chaturvedi, Mayank
    Dimitrijev, Sima
    Year published
    2021
    Metadata
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    Abstract
    A balance between static and dynamic losses of a power MOSFET is always desirable for accomplishing the maximum efficiency for a specific power converter. The standard semiconductor theory suggests that a minimum power dissipation in a MOSFET can be achieved by selecting a specific device active area. However, for power circuit designers, the active device area is unknown given that only datasheet parameters are available. Hence, in this paper, we propose a simple method, based on semiconductor theory, to select optimum power MOSFET from a family of MOSFETs using only datasheet parameters. By applying this optimization method ...
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    A balance between static and dynamic losses of a power MOSFET is always desirable for accomplishing the maximum efficiency for a specific power converter. The standard semiconductor theory suggests that a minimum power dissipation in a MOSFET can be achieved by selecting a specific device active area. However, for power circuit designers, the active device area is unknown given that only datasheet parameters are available. Hence, in this paper, we propose a simple method, based on semiconductor theory, to select optimum power MOSFET from a family of MOSFETs using only datasheet parameters. By applying this optimization method to the specific power supply circuit under development, power engineers can select the best transistors to yield lowest power losses for the systems under development.
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    Journal Title
    Electronics
    Volume
    10
    Issue
    17
    DOI
    https://doi.org/10.3390/electronics10172150
    Copyright Statement
    © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
    Subject
    Nanotechnology
    Electrical engineering
    Publication URI
    http://hdl.handle.net/10072/408076
    Collection
    • Journal articles

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