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dc.contributor.authorTan, Jin
dc.contributor.authorNan, Haiyan
dc.contributor.authorFu, Quangui
dc.contributor.authorZhang, Xiumei
dc.contributor.authorLiu, Xing
dc.contributor.authorNi, Zhenhua
dc.contributor.author(Ken) Ostrikov, Kostya
dc.contributor.authorXiao, Shaoqing
dc.contributor.authorGu, Xiaofeng
dc.date.accessioned2021-10-07T04:15:06Z
dc.date.available2021-10-07T04:15:06Z
dc.date.issued2021
dc.identifier.issn2199-160Xen_US
dc.identifier.doi10.1002/aelm.202100673en_US
dc.identifier.urihttp://hdl.handle.net/10072/408727
dc.description.abstractIntegrated polarization-sensitive photodetectors fabricated by geometric anisotropic 2D materials have become attractive in recent years. In this work, the successful construction of self-driven and polarization-sensitive photodetectors based on GaTe/MoS2 p–n van der Waals (vdW) heterojunction is demonstrated by mechanical exfoliation and dry transfer methods. The fabricated GaTe/MoS2 vdW heterojunctions show ambipolar behavior, and the highest rectification ratio can reach 93.4. The highest responsivity under 532 nm illumination reaches 145 mA W−1 and the response time is less than 10 ms. Moreover, the photocurrent polarization of the fabricated GaTe/MoS2 photodetectors manifests in fourfold anisotropy with a high polarization ratio of 2.9, which can be ascribed to the highly anisotropic monoclinic structure of layered m-GaTe. This finding thus offers more information and creates new opportunities about how to fabricate integrated polarization-sensitive photodetectors.en_US
dc.description.peerreviewedYesen_US
dc.languageEnglishen_US
dc.publisherWileyen_US
dc.relation.ispartofjournalAdvanced Electronic Materialsen_US
dc.subject.fieldofresearchElectrical engineeringen_US
dc.subject.fieldofresearchMaterials engineeringen_US
dc.subject.fieldofresearchcode4008en_US
dc.subject.fieldofresearchcode4016en_US
dc.subject.keywordsScience & Technologyen_US
dc.subject.keywordsPhysical Sciencesen_US
dc.subject.keywordsNanoscience & Nanotechnologyen_US
dc.subject.keywordsMaterials Science, Multidisciplinaryen_US
dc.titleFourfold Polarization-Sensitive Photodetector Based on GaTe/MoS2 van der Waals Heterojunctionen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Articlesen_US
dcterms.bibliographicCitationTan, J; Nan, H; Fu, Q; Zhang, X; Liu, X; Ni, Z; (Ken) Ostrikov, K; Xiao, S; Gu, X, Fourfold Polarization-Sensitive Photodetector Based on GaTe/MoS2 van der Waals Heterojunction, Advanced Electronic Materials, 2021en_US
dc.date.updated2021-10-07T01:04:39Z
gro.description.notepublicThis publication has been entered as an advanced online version in Griffith Research Online.en_US
gro.hasfulltextNo Full Text
gro.griffith.authorOstrikov, Ken


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