Show simple item record

dc.contributor.authorWang, Ruixue
dc.contributor.authorLi, Wenyao
dc.contributor.authorZhang, Cheng
dc.contributor.authorRen, Chengyan
dc.contributor.authorOstrikov, Kostya Ken
dc.contributor.authorShao, Tao
dc.date.accessioned2021-10-25T05:43:02Z
dc.date.available2021-10-25T05:43:02Z
dc.date.issued2017
dc.identifier.issn1612-8850
dc.identifier.doi10.1002/ppap.201600248
dc.identifier.urihttp://hdl.handle.net/10072/409462
dc.description.abstractLong-time partial discharge (PD) is regarded as one of the main reasons for the insulation failure of high-voltage cables. In this work, we report on the application of atmospheric pressure plasma to deposit siloxane film on copper to avoid PDs. The dielectric barrier discharge (DBD) plasma is driven by AC power supply, with tetraethoxysilane (TEOS), argon, and oxygen mixture as the source gas. The effect of oxygen gas flow rate on the thin film surface morphology, chemical composition, and electrical properties is studied systematically. Our results show that the stability of the plasma deteriorated, when the oxygen flow rate exceeded 10 sccm. The addition of oxygen in the source gas induced a high oxidation level of deposited thin film. The chemical composition of thin film was in the form of SiOx (x = 1.9) with 10 sccm oxygen compared to SiOx (x = 1.2), when deposited in the absence of oxygen. Additionally, the optimal thin film with good stability was obtained with the surface resistivity 1.1 × 1011 Ω, when deposited in the absence of oxygen. The corresponding relative permittivity of the deposited thin film is 2.9. The simulation results demonstrated that the electric field distortion was weaken after the film deposition, which reduced the probability of PD to occur.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherWILEY-V C H VERLAG GMBH
dc.relation.ispartofissue7
dc.relation.ispartofjournalPlasma Processors and Polymers
dc.relation.ispartofvolume14
dc.subject.fieldofresearchNuclear and plasma physics
dc.subject.fieldofresearchPhysical chemistry
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchcode5106
dc.subject.fieldofresearchcode3406
dc.subject.fieldofresearchcode4016
dc.subject.keywordsScience & Technology
dc.subject.keywordsPhysical Sciences
dc.subject.keywordsPhysics, Applied
dc.subject.keywordsPhysics, Fluids & Plasmas
dc.subject.keywordsPhysics, Condensed Matter
dc.titleThin insulating film deposition on copper by atmospheric-pressure plasmas
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationWang, R; Li, W; Zhang, C; Ren, C; Ostrikov, KK; Shao, T, Thin insulating film deposition on copper by atmospheric-pressure plasmas, Plasma Processors and Polymers, 2017, 14 (7)
dc.date.updated2021-10-25T05:41:16Z
gro.hasfulltextNo Full Text
gro.griffith.authorOstrikov, Ken


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

  • Journal articles
    Contains articles published by Griffith authors in scholarly journals.

Show simple item record