Charge transport in deep and shallow states in a high-mobility polymer FET
Author(s)
Kim, Seohee
Ha, Tae-Jun
Sonar, Prashant
Dodabalapur, Ananth
Griffith University Author(s)
Year published
2016
Metadata
Show full item recordAbstract
Polymer FETs generally have a wide subthreshold regime due to a lot of disorder, mainly originated from domain/grain boundaries. Deep state's charge transport of polymer transistors has not been investigated due to the difficulty in determining the field-effect mobility in the subthreshold region. In this paper, the features of the charge transport in deep and shallow states of polymer transistors will be discussed in detail through an accurate modeling and an analysis of subthreshold behavior in transistors. Charge transport in shallow states can be described by multiple trap and release transport, while hopping transport ...
View more >Polymer FETs generally have a wide subthreshold regime due to a lot of disorder, mainly originated from domain/grain boundaries. Deep state's charge transport of polymer transistors has not been investigated due to the difficulty in determining the field-effect mobility in the subthreshold region. In this paper, the features of the charge transport in deep and shallow states of polymer transistors will be discussed in detail through an accurate modeling and an analysis of subthreshold behavior in transistors. Charge transport in shallow states can be described by multiple trap and release transport, while hopping transport models, such as variable range hopping or Gaussian disorder-based model, describe well the deeper state's charge transport. In addition, the transition between the conduction regimes is a function of temperature and carrier density.
View less >
View more >Polymer FETs generally have a wide subthreshold regime due to a lot of disorder, mainly originated from domain/grain boundaries. Deep state's charge transport of polymer transistors has not been investigated due to the difficulty in determining the field-effect mobility in the subthreshold region. In this paper, the features of the charge transport in deep and shallow states of polymer transistors will be discussed in detail through an accurate modeling and an analysis of subthreshold behavior in transistors. Charge transport in shallow states can be described by multiple trap and release transport, while hopping transport models, such as variable range hopping or Gaussian disorder-based model, describe well the deeper state's charge transport. In addition, the transition between the conduction regimes is a function of temperature and carrier density.
View less >
Journal Title
IEEE Transactions on Electron Devices
Volume
63
Issue
3
Subject
Electrical engineering
Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Physics, Applied