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dc.contributor.authorKim, Seohee
dc.contributor.authorHa, Tae-Jun
dc.contributor.authorSonar, Prashant
dc.contributor.authorDodabalapur, Ananth
dc.date.accessioned2021-11-03T04:48:33Z
dc.date.available2021-11-03T04:48:33Z
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.doi10.1109/TED.2016.2521663
dc.identifier.urihttp://hdl.handle.net/10072/409719
dc.description.abstractPolymer FETs generally have a wide subthreshold regime due to a lot of disorder, mainly originated from domain/grain boundaries. Deep state's charge transport of polymer transistors has not been investigated due to the difficulty in determining the field-effect mobility in the subthreshold region. In this paper, the features of the charge transport in deep and shallow states of polymer transistors will be discussed in detail through an accurate modeling and an analysis of subthreshold behavior in transistors. Charge transport in shallow states can be described by multiple trap and release transport, while hopping transport models, such as variable range hopping or Gaussian disorder-based model, describe well the deeper state's charge transport. In addition, the transition between the conduction regimes is a function of temperature and carrier density.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherIEEE
dc.relation.ispartofpagefrom1254
dc.relation.ispartofpageto1259
dc.relation.ispartofissue3
dc.relation.ispartofjournalIEEE Transactions on Electron Devices
dc.relation.ispartofvolume63
dc.subject.fieldofresearchElectrical engineering
dc.subject.fieldofresearchcode4008
dc.subject.keywordsScience & Technology
dc.subject.keywordsTechnology
dc.subject.keywordsPhysical Sciences
dc.subject.keywordsEngineering, Electrical & Electronic
dc.subject.keywordsPhysics, Applied
dc.titleCharge transport in deep and shallow states in a high-mobility polymer FET
dc.typeJournal article
dc.type.descriptionC1 - Articles
dcterms.bibliographicCitationKim, S; Ha, T-J; Sonar, P; Dodabalapur, A, Charge transport in deep and shallow states in a high-mobility polymer FET, IEEE Transactions on Electron Devices, 2016, 63 (3), pp. 1254-1259
dc.date.updated2021-11-03T04:45:36Z
gro.hasfulltextNo Full Text
gro.griffith.authorSonar, Prashant


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