Demonstration of p-type 3C-SiC grown on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °C
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Author(s)
Wang, Li
Dimitrijev, Sima
Han, Jisheng
Tanner, Philip
Iacopi, Alan
Hold, Leonie
Year published
2011
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Show full item recordAbstract
The potential for enhancement of Si-based devices by growth of SiC films on large-diameter Si wafers is hampered by the very high temperatures (close to the Si melting temperature) that are needed for growth and doping by the existing techniques. Here, we present a unique doping method for growth of Al-doped single-crystalline 3C-SiC epilayers on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 1C using a conventional low-pressure chemical vapor deposition reactor. Al atomic concentration in the range of 2.8 1019 to 2.1 1020 cm 3, proportional to the supply volume of trimethylaluminium, is experimentally demonstrated. ...
View more >The potential for enhancement of Si-based devices by growth of SiC films on large-diameter Si wafers is hampered by the very high temperatures (close to the Si melting temperature) that are needed for growth and doping by the existing techniques. Here, we present a unique doping method for growth of Al-doped single-crystalline 3C-SiC epilayers on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 1C using a conventional low-pressure chemical vapor deposition reactor. Al atomic concentration in the range of 2.8 1019 to 2.1 1020 cm 3, proportional to the supply volume of trimethylaluminium, is experimentally demonstrated. A doping mechanism, based on the supply sequence of precursors and reactor pressure, is proposed.
View less >
View more >The potential for enhancement of Si-based devices by growth of SiC films on large-diameter Si wafers is hampered by the very high temperatures (close to the Si melting temperature) that are needed for growth and doping by the existing techniques. Here, we present a unique doping method for growth of Al-doped single-crystalline 3C-SiC epilayers on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 1C using a conventional low-pressure chemical vapor deposition reactor. Al atomic concentration in the range of 2.8 1019 to 2.1 1020 cm 3, proportional to the supply volume of trimethylaluminium, is experimentally demonstrated. A doping mechanism, based on the supply sequence of precursors and reactor pressure, is proposed.
View less >
Journal Title
Journal of Crystal Growth
Volume
329
Issue
1
Subject
Macromolecular and materials chemistry
Physical chemistry
Materials engineering
Compound semiconductors