Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures
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Author(s)
Vidarsson, AM
Nicholls, JR
Haasmann, D
Dimitrijev, S
Sveinbjörnsson, E
Year published
2022
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The inversion channel electron mobility in 4H-SiC MOSFETs with NO annealed gate oxides is still well below its theoretical limit. The physical reason behind the reduced mobility is not yet fully established but has for example been attributed to a high density of very fast interface traps close to the conduction band edge. These traps are not detected by high-low CV analysis at room temperature but are observed by conductance spectroscopy at low temperatures. In this study we demonstrate how conventional high-low CV analysis of MOS capacitors at cryogenic temperatures can be applied to detect and quantify these very fast traps.The inversion channel electron mobility in 4H-SiC MOSFETs with NO annealed gate oxides is still well below its theoretical limit. The physical reason behind the reduced mobility is not yet fully established but has for example been attributed to a high density of very fast interface traps close to the conduction band edge. These traps are not detected by high-low CV analysis at room temperature but are observed by conductance spectroscopy at low temperatures. In this study we demonstrate how conventional high-low CV analysis of MOS capacitors at cryogenic temperatures can be applied to detect and quantify these very fast traps.
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Journal Title
Materials Science Forum
Volume
1062
Copyright Statement
© 2022 The Author(s). Published by Trans Tech Publications Ltd, Switzerland. This article is an open access article under the terms and conditions of the Creative Commons Attribution (CC BY) license
(https://creativecommons.org/licenses/by/4.0)
Subject
Nanoelectronics
Materials engineering