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  • Band energy structure calculations and spin effect in zinc-blende semiconductors

    Author
    Miah, Mohammad
    Kityk, I.
    Year published
    2011
    Metadata
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    Abstract
    Band energy structure of the n-doped zinc-blende semiconductor was calculated using norm-conserving pseudopotential and Green function methods. The calculations for the semiconductor with different dopant contents were performed in the presence of external circularly polarized axial and polar dc-field potentials. Changes in the spin density distribution for the clusters with different dopant concentrations and at different lattice temperatures and an enhancement of the spin-polarized delocalization states in the presence of the dc-field potential were observed. The observed photo-induced spin effects were explained within a ...
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    Band energy structure of the n-doped zinc-blende semiconductor was calculated using norm-conserving pseudopotential and Green function methods. The calculations for the semiconductor with different dopant contents were performed in the presence of external circularly polarized axial and polar dc-field potentials. Changes in the spin density distribution for the clusters with different dopant concentrations and at different lattice temperatures and an enhancement of the spin-polarized delocalization states in the presence of the dc-field potential were observed. The observed photo-induced spin effects were explained within a framework of the band energy model of spin physics of taking into account of the photo-induced electron-phonon anharmonicity. The results are consistent with those obtained in experiments of photospintronics.
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    Journal Title
    Optics Communications
    Volume
    284
    Issue
    10-11
    DOI
    https://doi.org/10.1016/j.optcom.2011.01.026
    Subject
    Electrical and Electronic Engineering not elsewhere classified
    Publication URI
    http://hdl.handle.net/10072/43792
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    • Journal articles

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