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dc.contributor.authorHan, Jisheng
dc.contributor.authorDimitrjiev, Sima
dc.contributor.authorWang, Li
dc.contributor.authorIacopi, Alan
dc.contributor.authorQu, Shuang
dc.contributor.authorXu, Xiangang
dc.contributor.editorMonakhov, EV
dc.contributor.editorHornos, T
dc.contributor.editorSvensson, BG
dc.date.accessioned2017-05-03T11:51:45Z
dc.date.available2017-05-03T11:51:45Z
dc.date.issued2011
dc.date.modified2012-03-29T04:52:18Z
dc.identifier.issn0255-5476
dc.identifier.doi10.4028/www.scientific.net/MSF.679-680.801
dc.identifier.urihttp://hdl.handle.net/10072/44073
dc.description.abstractGallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherTrans Tech Publications
dc.publisher.placeSwitzerland
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom801
dc.relation.ispartofpageto803
dc.relation.ispartofjournalMaterials Science Forum
dc.relation.ispartofvolume679-680
dc.rights.retentionY
dc.subject.fieldofresearchPhysical chemistry
dc.subject.fieldofresearchMicroelectronics
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchcode3406
dc.subject.fieldofresearchcode400908
dc.subject.fieldofresearchcode4016
dc.titleInGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyrightSelf-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
gro.date.issued2011
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima


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