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dc.contributor.authorHan, Jishengen_US
dc.contributor.authorDimitrijev, Simaen_US
dc.contributor.authorWang, Lien_US
dc.contributor.authorIacopi, Alanen_US
dc.contributor.authorQu, Shuangen_US
dc.contributor.authorXu, Xiangangen_US
dc.date.accessioned2017-04-24T08:48:18Z
dc.date.available2017-04-24T08:48:18Z
dc.date.issued2011en_US
dc.date.modified2012-03-29T04:52:18Z
dc.identifier.issn02555476en_US
dc.identifier.doi10.4028/www.scientific.net/MSF.679-680.801en_US
dc.identifier.urihttp://hdl.handle.net/10072/44073
dc.description.abstractGallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.en_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_US
dc.languageEnglishen_US
dc.publisherTrans Tech Publicationsen_US
dc.publisher.placeSwitzerlanden_US
dc.relation.ispartofstudentpublicationNen_US
dc.relation.ispartofpagefrom801en_US
dc.relation.ispartofpageto803en_US
dc.relation.ispartofjournalMaterials Science Forumen_US
dc.relation.ispartofvolume679-680en_US
dc.rights.retentionYen_US
dc.subject.fieldofresearchMicroelectronics and Integrated Circuitsen_US
dc.subject.fieldofresearchcode090604en_US
dc.titleInGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrateen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Peer Reviewed (HERDC)en_US
dc.type.codeC - Journal Articlesen_US
gro.facultyGriffith Sciences, Griffith School of Engineeringen_US
gro.rights.copyrightSelf-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.en_US
gro.date.issued2011
gro.hasfulltextNo Full Text


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