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  • Depolarization of the photoluminescence and spin relaxation in n-doped GaAs

    Author(s)
    Miah, M Idrish
    Griffith University Author(s)
    Miah, Mohammad I.
    Year published
    2011
    Metadata
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    Abstract
    Optically oriented electron spin lifetime in n-doped gallium arsenide was measured via depolarization of the photoluminescence (PL) in a transverse magnetic field (Hanle effect). In order to measure the PL polarization, a time-resolved pump-probe experiment, where a pump pulse generates spin-polarized electrons and a probe pulse monitors their polarization, was employed. The PL polarization in dependences of the pump-probe delay, external magnetic field as well as of the sample temperature was studied. The PL polarization was found to decay exponentially with the pump-probe delay, from which the spin lifetime of the electrons ...
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    Optically oriented electron spin lifetime in n-doped gallium arsenide was measured via depolarization of the photoluminescence (PL) in a transverse magnetic field (Hanle effect). In order to measure the PL polarization, a time-resolved pump-probe experiment, where a pump pulse generates spin-polarized electrons and a probe pulse monitors their polarization, was employed. The PL polarization in dependences of the pump-probe delay, external magnetic field as well as of the sample temperature was studied. The PL polarization was found to decay exponentially with the pump-probe delay, from which the spin lifetime of the electrons was measured. The measured value was found to depend on the strength of the magnetic field and sample temperature.
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    Journal Title
    Optics Communications
    Volume
    284
    Issue
    5
    DOI
    https://doi.org/10.1016/j.optcom.2010.10.079
    Subject
    Atomic, Molecular, Nuclear, Particle and Plasma Physics not elsewhere classified
    Optical Physics
    Electrical and Electronic Engineering
    Communications Technologies
    Publication URI
    http://hdl.handle.net/10072/44376
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    • Journal articles

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