Size-Dependent Characteristics of Indium-Seeded Si Nanowire Growth
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Si nanowires were grown by a vapor-liquid-solid mechanism using indium catalyst particles with sizes between 10 and 200 nm. Transmission electron microscopy analysis indicates that the growth morphology of the nanostructures changes drastically when the particle size is only a few tens of nanometers. The larger wires are monocrystalline, growing with 111 orientation and limited tapering. The simultaneously grown smaller wires appear strongly tapered, due to an accumulation of amorphous Si on the sidewalls, and present a poor crystalline quality. A model based on the solubility of Si in the In-Si eutectic is proposed to account for the size-dependent change of morphology.
Electrochemical and Solid-State Letters
Copyright The Electrochemical Society, Inc. 2008. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Electrochemical and Solid-State Letters, Vol. 11(9), pp. K98-K100.
Surfaces and Structural Properties of Condensed Matter