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  • Fabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation source

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    77842_1.pdf (139.1Kb)
    Author(s)
    Guo, Hui
    Shi, Yanqiang
    Zhang, Yuming
    Zhang, Yujuan
    Han, Jisheng
    Griffith University Author(s)
    Han, Jisheng
    Year published
    2011
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    Abstract
    A high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-circuit voltage (0.98V) and the power density (8.0nW/cm2) of the cell are the highest in the all reported SiC betavoltaic cells using 63Ni as irradiation source. The fill factor (FF) of the cell (74%) is the highest in all of the wide band gap semiconductor betavoltaic cells, including SiC and GaN.A high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-circuit voltage (0.98V) and the power density (8.0nW/cm2) of the cell are the highest in the all reported SiC betavoltaic cells using 63Ni as irradiation source. The fill factor (FF) of the cell (74%) is the highest in all of the wide band gap semiconductor betavoltaic cells, including SiC and GaN.
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    Conference Title
    2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
    DOI
    https://doi.org/10.1109/EDSSC.2011.6117636
    Copyright Statement
    © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
    Subject
    Electrical and Electronic Engineering not elsewhere classified
    Publication URI
    http://hdl.handle.net/10072/46188
    Collection
    • Conference outputs

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