Fabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation source
Abstract
A high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-circuit voltage (0.98V) and the power density (8.0nW/cm2) of the cell are the highest in the all reported SiC betavoltaic cells using 63Ni as irradiation source. The fill factor (FF) of the cell (74%) is the highest in all of the wide band gap semiconductor betavoltaic cells, including SiC and GaN.
Conference Title
2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
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Subject
Electrical and Electronic Engineering not elsewhere classified