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dc.contributor.authorGuo, Huien_US
dc.contributor.authorShi, Yanqiangen_US
dc.contributor.authorZhang, Yumingen_US
dc.contributor.authorZhang, Yujuanen_US
dc.contributor.authorHan, Jishengen_US
dc.contributor.editorJianguo Ma, Tianjin Universityen_US
dc.date.accessioned2017-06-19T01:30:37Z
dc.date.available2017-06-19T01:30:37Z
dc.date.issued2011en_US
dc.date.modified2013-09-09T22:55:45Z
dc.identifier.refurihttp://edssc2011.tju.edu.cn/welcome_edssc2011.htmen_US
dc.identifier.doi10.1109/EDSSC.2011.6117636en_US
dc.identifier.urihttp://hdl.handle.net/10072/46188
dc.description.abstractA high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-circuit voltage (0.98V) and the power density (8.0nW/cm2) of the cell are the highest in the all reported SiC betavoltaic cells using 63Ni as irradiation source. The fill factor (FF) of the cell (74%) is the highest in all of the wide band gap semiconductor betavoltaic cells, including SiC and GaN.en_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_US
dc.format.extent142530 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglishen_US
dc.language.isoen_US
dc.publisherIEEEen_US
dc.publisher.placeUnited Statesen_US
dc.relation.ispartofstudentpublicationNen_US
dc.relation.ispartofconferencenameEDSSC 2011en_US
dc.relation.ispartofconferencetitle2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011en_US
dc.relation.ispartofdatefrom2011-11-17en_US
dc.relation.ispartofdateto2011-11-18en_US
dc.relation.ispartoflocationStart Epoch Hotel, Tianjin, Chinaen_US
dc.rights.retentionYen_US
dc.subject.fieldofresearchElectrical and Electronic Engineering not elsewhere classifieden_US
dc.subject.fieldofresearchcode090699en_US
dc.titleFabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation sourceen_US
dc.typeConference outputen_US
dc.type.descriptionE1 - Conference Publications (HERDC)en_US
dc.type.codeE - Conference Publicationsen_US
gro.rights.copyrightCopyright 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_US
gro.date.issued2011
gro.hasfulltextFull Text


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