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  • Spin relaxation due to polar optical phonon scattering

    Author(s)
    Miah, M Idrish
    Gray, E MacA
    Griffith University Author(s)
    Gray, Evan M.
    Miah, Mohammad I.
    Year published
    2012
    Metadata
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    Abstract
    Spin relaxation due to polar optical phonon scattering in semiconductors was investigated. The relaxation of the electron spin was found to increase with increasing the strength of the electric field. However, a high field completely depolarized the electron spin due to an increase of the spin precession frequency of the hot electrons, suggesting that high field transport conditions might not be desirable for spin-based technology with these semiconductors. It was also found that spin relaxation decreases with increasing moderately n-doping density or decreasing temperature. The results were discussed in comparison with the ...
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    Spin relaxation due to polar optical phonon scattering in semiconductors was investigated. The relaxation of the electron spin was found to increase with increasing the strength of the electric field. However, a high field completely depolarized the electron spin due to an increase of the spin precession frequency of the hot electrons, suggesting that high field transport conditions might not be desirable for spin-based technology with these semiconductors. It was also found that spin relaxation decreases with increasing moderately n-doping density or decreasing temperature. The results were discussed in comparison with the data available in the literature.
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    Journal Title
    Journal of the Physics and Chemistry of Solids
    Volume
    73
    Issue
    3
    DOI
    https://doi.org/10.1016/j.jpcs.2011.11.023
    Subject
    Condensed matter physics
    Electronic and magnetic properties of condensed matter; superconductivity
    Physical chemistry
    Materials engineering
    Publication URI
    http://hdl.handle.net/10072/47707
    Collection
    • Journal articles

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