Critical Thickness of ZnTe on GaSb(211)B

Abstract

An important parameter for heteroepitaxial material systems is the critical thickness h c. To date, for the material system ZnTe on GaSb, agreement between experimental and theoretical values of h c has been poor. In this paper, we present results of an experimental study of h c for ZnTe layers on GaSb(211)B substrates based on a combination of high-resolution x-ray diffraction and photoluminescence measurements. Our experimentally determined h c value of 350 nm to 375 nm agrees well with the models of Cohen-Solal and Dunstan.