Critical Thickness of ZnTe on GaSb(211)B
Author(s)
Chai, J.
Noriega, O.
Dinan, J.
Myers, T.
Griffith University Author(s)
Year published
2012
Metadata
Show full item recordAbstract
An important parameter for heteroepitaxial material systems is the critical thickness h c. To date, for the material system ZnTe on GaSb, agreement between experimental and theoretical values of h c has been poor. In this paper, we present results of an experimental study of h c for ZnTe layers on GaSb(211)B substrates based on a combination of high-resolution x-ray diffraction and photoluminescence measurements. Our experimentally determined h c value of 350 nm to 375 nm agrees well with the models of Cohen-Solal and Dunstan.An important parameter for heteroepitaxial material systems is the critical thickness h c. To date, for the material system ZnTe on GaSb, agreement between experimental and theoretical values of h c has been poor. In this paper, we present results of an experimental study of h c for ZnTe layers on GaSb(211)B substrates based on a combination of high-resolution x-ray diffraction and photoluminescence measurements. Our experimentally determined h c value of 350 nm to 375 nm agrees well with the models of Cohen-Solal and Dunstan.
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Journal Title
Journal of Electronic Materials
Volume
41
Issue
11
Subject
Compound Semiconductors
Atomic, Molecular, Nuclear, Particle and Plasma Physics
Electrical and Electronic Engineering
Other Technology