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  • Critical Thickness of ZnTe on GaSb(211)B

    Author(s)
    Chai, J.
    Noriega, O.
    Dinan, J.
    Myers, T.
    Griffith University Author(s)
    Chai, Jessica
    Year published
    2012
    Metadata
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    Abstract
    An important parameter for heteroepitaxial material systems is the critical thickness h c. To date, for the material system ZnTe on GaSb, agreement between experimental and theoretical values of h c has been poor. In this paper, we present results of an experimental study of h c for ZnTe layers on GaSb(211)B substrates based on a combination of high-resolution x-ray diffraction and photoluminescence measurements. Our experimentally determined h c value of 350 nm to 375 nm agrees well with the models of Cohen-Solal and Dunstan.An important parameter for heteroepitaxial material systems is the critical thickness h c. To date, for the material system ZnTe on GaSb, agreement between experimental and theoretical values of h c has been poor. In this paper, we present results of an experimental study of h c for ZnTe layers on GaSb(211)B substrates based on a combination of high-resolution x-ray diffraction and photoluminescence measurements. Our experimentally determined h c value of 350 nm to 375 nm agrees well with the models of Cohen-Solal and Dunstan.
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    Journal Title
    Journal of Electronic Materials
    Volume
    41
    Issue
    11
    DOI
    https://doi.org/10.1007/s11664-012-2120-8
    Subject
    Compound Semiconductors
    Atomic, Molecular, Nuclear, Particle and Plasma Physics
    Electrical and Electronic Engineering
    Other Technology
    Publication URI
    http://hdl.handle.net/10072/48289
    Collection
    • Journal articles

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