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dc.contributor.authorChai, J.
dc.contributor.authorNoriega, O.
dc.contributor.authorDinan, J.
dc.contributor.authorMyers, T.
dc.date.accessioned2017-05-03T16:14:07Z
dc.date.available2017-05-03T16:14:07Z
dc.date.issued2012
dc.date.modified2013-06-18T02:03:37Z
dc.identifier.issn1543186X
dc.identifier.doi10.1007/s11664-012-2120-8
dc.identifier.urihttp://hdl.handle.net/10072/48289
dc.description.abstractAn important parameter for heteroepitaxial material systems is the critical thickness h c. To date, for the material system ZnTe on GaSb, agreement between experimental and theoretical values of h c has been poor. In this paper, we present results of an experimental study of h c for ZnTe layers on GaSb(211)B substrates based on a combination of high-resolution x-ray diffraction and photoluminescence measurements. Our experimentally determined h c value of 350 nm to 375 nm agrees well with the models of Cohen-Solal and Dunstan.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherSpringer
dc.publisher.placeUnited States
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom3001
dc.relation.ispartofpageto3006
dc.relation.ispartofissue11
dc.relation.ispartofjournalJournal of Electronic Materials
dc.relation.ispartofvolume41
dc.rights.retentionY
dc.subject.fieldofresearchCompound Semiconductors
dc.subject.fieldofresearchAtomic, Molecular, Nuclear, Particle and Plasma Physics
dc.subject.fieldofresearchElectrical and Electronic Engineering
dc.subject.fieldofresearchOther Technology
dc.subject.fieldofresearchcode091203
dc.subject.fieldofresearchcode0202
dc.subject.fieldofresearchcode0906
dc.subject.fieldofresearchcode1099
dc.titleCritical Thickness of ZnTe on GaSb(211)B
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.date.issued2012
gro.hasfulltextNo Full Text
gro.griffith.authorChai, Jessica


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