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  • X-Ray Photoelectron Spectroscopy Study of Oxide Removal Using Atomic Hydrogen for Large-Area II–VI Material Growth

    Author(s)
    Lee, Kyoung-Keun
    Doyle, Kevin
    Chai, Jessica
    H. Dinan, John
    H. Myers, Thomas
    Griffith University Author(s)
    Chai, Jessica
    Year published
    2012
    Metadata
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    Abstract
    This study investigates using atomic hydrogen to clean GaSb (211)B and (111)B substrates as an alternative to thermal desorption under an Sb overpressure. X-ray photoelectron spectroscopy measurement verified the oxide removal on the atomic hydrogen-cleaned GaSb. Atomic force microscopy was used to characterize the surface morphologies of GaSb after atomic hydrogen cleaning with various conditions. All substrates investigated contained a high density of pits that became larger as higher deoxidation temperatures were used, with or without atomic hydrogen. Growth of homoepitaxial GaSb (100) and (211)B was used to compare ...
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    This study investigates using atomic hydrogen to clean GaSb (211)B and (111)B substrates as an alternative to thermal desorption under an Sb overpressure. X-ray photoelectron spectroscopy measurement verified the oxide removal on the atomic hydrogen-cleaned GaSb. Atomic force microscopy was used to characterize the surface morphologies of GaSb after atomic hydrogen cleaning with various conditions. All substrates investigated contained a high density of pits that became larger as higher deoxidation temperatures were used, with or without atomic hydrogen. Growth of homoepitaxial GaSb (100) and (211)B was used to compare stoichiometry changes with various oxide removal conditions, and growth effects on sequential epilayers.
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    Journal Title
    Journal of Electronic Materials
    Volume
    41
    Issue
    10
    DOI
    https://doi.org/10.1007/s11664-012-2085-7
    Subject
    Compound Semiconductors
    Atomic, Molecular, Nuclear, Particle and Plasma Physics
    Electrical and Electronic Engineering
    Other Technology
    Publication URI
    http://hdl.handle.net/10072/48304
    Collection
    • Journal articles

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