X-Ray Photoelectron Spectroscopy Study of Oxide Removal Using Atomic Hydrogen for Large-Area II–VI Material Growth
Author(s)
Lee, Kyoung-Keun
Doyle, Kevin
Chai, Jessica
H. Dinan, John
H. Myers, Thomas
Griffith University Author(s)
Year published
2012
Metadata
Show full item recordAbstract
This study investigates using atomic hydrogen to clean GaSb (211)B and (111)B substrates as an alternative to thermal desorption under an Sb overpressure. X-ray photoelectron spectroscopy measurement verified the oxide removal on the atomic hydrogen-cleaned GaSb. Atomic force microscopy was used to characterize the surface morphologies of GaSb after atomic hydrogen cleaning with various conditions. All substrates investigated contained a high density of pits that became larger as higher deoxidation temperatures were used, with or without atomic hydrogen. Growth of homoepitaxial GaSb (100) and (211)B was used to compare ...
View more >This study investigates using atomic hydrogen to clean GaSb (211)B and (111)B substrates as an alternative to thermal desorption under an Sb overpressure. X-ray photoelectron spectroscopy measurement verified the oxide removal on the atomic hydrogen-cleaned GaSb. Atomic force microscopy was used to characterize the surface morphologies of GaSb after atomic hydrogen cleaning with various conditions. All substrates investigated contained a high density of pits that became larger as higher deoxidation temperatures were used, with or without atomic hydrogen. Growth of homoepitaxial GaSb (100) and (211)B was used to compare stoichiometry changes with various oxide removal conditions, and growth effects on sequential epilayers.
View less >
View more >This study investigates using atomic hydrogen to clean GaSb (211)B and (111)B substrates as an alternative to thermal desorption under an Sb overpressure. X-ray photoelectron spectroscopy measurement verified the oxide removal on the atomic hydrogen-cleaned GaSb. Atomic force microscopy was used to characterize the surface morphologies of GaSb after atomic hydrogen cleaning with various conditions. All substrates investigated contained a high density of pits that became larger as higher deoxidation temperatures were used, with or without atomic hydrogen. Growth of homoepitaxial GaSb (100) and (211)B was used to compare stoichiometry changes with various oxide removal conditions, and growth effects on sequential epilayers.
View less >
Journal Title
Journal of Electronic Materials
Volume
41
Issue
10
Subject
Compound Semiconductors
Atomic, Molecular, Nuclear, Particle and Plasma Physics
Electrical and Electronic Engineering
Other Technology