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  • Nanoindentation for reliability assessment of ULK films and interconnects structures

    Author(s)
    Yeap, Kong Boon
    Iacopi, Francesca
    Geisler, Holm
    Hangen, Ude
    Zschech, Ehrenfried
    Griffith University Author(s)
    Iacopi, Francesca
    Year published
    2013
    Metadata
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    Abstract
    The structural integrity of interconnect structures containing ultra-low-k (ULK) dielectrics is highly dependent on the mechanical properties of the porous dielectrics, e.g. fracture toughness elastic modulus and adhesion as well. Four-point-bending (FPB) and double-cantilever-beam (DCB) methods for the evaluation of fracture properties require out-of-fab sample preparation and testing. The reliable characterization of interfacial adhesion is important for in-line/at-line process development and control in microelectronics manufacturing. The ability to detect an out-of-spec or defective ULK film at an early process step ...
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    The structural integrity of interconnect structures containing ultra-low-k (ULK) dielectrics is highly dependent on the mechanical properties of the porous dielectrics, e.g. fracture toughness elastic modulus and adhesion as well. Four-point-bending (FPB) and double-cantilever-beam (DCB) methods for the evaluation of fracture properties require out-of-fab sample preparation and testing. The reliable characterization of interfacial adhesion is important for in-line/at-line process development and control in microelectronics manufacturing. The ability to detect an out-of-spec or defective ULK film at an early process step could potentially save processing and materials cost. Therefore, the development of quick turnaround experimental methodologies for monitoring in-line/at-line mechanical stability of ULK films and ULK-containing interconnects is of great interest for semiconductor industry. This study presents two novel experimental approaches for the evaluation of interface adhesion and mechanical robustness of on-chip interconnects structures based on nanoindentation and nanoscratch, (a) wedge indentation and (b) bump assisted BEOL stability indentation (BABSI) tests, respectively. Wedge indentation tests on ULK films with increasing porosity show a decrease of adhesion values. Correspondingly, BABSI tests show increasing failure rates for Cu/ULK interconnect structures containing mechanically weaker dielectrics.
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    Journal Title
    Microelectronic Engineering
    Volume
    106
    DOI
    https://doi.org/10.1016/j.mee.2012.09.013
    Subject
    Condensed Matter Characterisation Technique Development
    Materials Engineering not elsewhere classified
    Condensed Matter Physics
    Other Physical Sciences
    Electrical and Electronic Engineering
    Publication URI
    http://hdl.handle.net/10072/48766
    Collection
    • Journal articles

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