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dc.contributor.authorLinhart, W.
dc.contributor.authorChai, J.
dc.contributor.authorH Morris, R.
dc.contributor.authorDowsett, M.
dc.contributor.authorMcConville, C.
dc.contributor.authorDurbin, S.
dc.contributor.authorVeal, T.
dc.date.accessioned2017-05-03T16:14:06Z
dc.date.available2017-05-03T16:14:06Z
dc.date.issued2012
dc.date.modified2013-04-04T04:15:22Z
dc.identifier.issn1079-7114
dc.identifier.doi10.1103/PhysRevLett.109.247605
dc.identifier.urihttp://hdl.handle.net/10072/49436
dc.description.abstractExtreme electron accumulation with sheet density greater than 1013??cm-2 is almost universally present at the surface of indium nitride (InN). Here, x-ray photoemission spectroscopy and secondary ion mass spectrometry are used to show that the surface Fermi level decreases as the Mg concentration increases, with the sheet electron density falling to below 108??cm-2. Surface space-charge calculations indicate that the lowering of the surface Fermi level increases the density of unoccupied donor-type surface states and that these are largely compensated by Mg acceptors in the near-surface hole depletion region rather than by accumulated electrons. This is a significant step towards the realization of InN-based optoelectronic devices.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.format.extent445087 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Physical Society
dc.publisher.placeUnited States
dc.relation.ispartofstudentpublicationY
dc.relation.ispartofpagefrom247605-1
dc.relation.ispartofpageto247605-5
dc.relation.ispartofissue24
dc.relation.ispartofjournalPhysical Review Letters
dc.relation.ispartofvolume109
dc.rights.retentionY
dc.subject.fieldofresearchCompound Semiconductors
dc.subject.fieldofresearchMathematical Sciences
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode091203
dc.subject.fieldofresearchcode01
dc.subject.fieldofresearchcode02
dc.subject.fieldofresearchcode09
dc.titleGiant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.rights.copyright© 2012 American Physical Society. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
gro.date.issued2012
gro.hasfulltextFull Text
gro.griffith.authorChai, Jessica


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