SiC-based Piezoelectric Energy Harvester for Extreme Environment
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This paper explores the feasibility of employing cubic silicon carbide on silicon wafer (3C-SiC-on-Si) as a vertical cantilever for the piezoelectric-based energy harvesting in the d31 mode intended for the extreme environments. 100nm thick 3C-SiC layer is plasma-etched out of the <100> silicon (Si) wafer and is employed as a bottom electrode, 1孠thick Aluminum nitride (AlN) as a piezoelectric thin film (active layer) and 50nm thick Molybdenum is sputtered on top of the cantilever structure as a top electrode. The length and width of the cantilever beam are 400孠and 30孬 respectively. The performances of the energy harvester using 3C-SiC and Si as bottom electrode and substrate are simulated and compared. The generated output voltage at 1KO load resistance is 7.85 times higher for the 3C-SiC based device. Additional tests at higher temperatures show 3C-SiC superior performances in terms of generated power and material strength.
Copyright 2012 The Authors. Published by Elsevier Ltd. Open access under the Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported (CC BY-NC-ND 3.0) License which permits unrestricted, non-commercial use, distribution and reproduction in any medium, providing that the work is properly cited. You may not alter, transform, or build upon this work.
Microelectromechanical Systems (MEMS)
Microelectronics and Integrated Circuits