Comparison of charge-retention times in n- and p-type 4H-SiC MOS capacitors as non-volatile memory elements
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The metal-ferroelectric-insulator-semiconductor (MFIS) structure has been fabricated using Bi3.54Nd0.46Ti3O12 (BNdT) as a ferroelectric layer. The BNdT films can crystallize well at 700àfor 1 h. The J-V curve shows the MFIS structure has a good insulating property. C-V hysteresis loops at various sweeping speed were collected as were polarization types. The leakage current density, dielectric constant and dielectric loss were found to be dependent on the annealing temperature. The dielectric constant and dielectric loss at a frequency of 100 kHz are 98 and 0.092, respectively.
Journal of Crystal Growth