Comparison of charge-retention times in n- and p-type 4H-SiC MOS capacitors as non-volatile memory elements
Author(s)
Cheong, KY
Dimitrijev, S
Han, J
Griffith University Author(s)
Year published
2004
Metadata
Show full item recordAbstract
The metal-ferroelectric-insulator-semiconductor (MFIS) structure has been fabricated using Bi3.54Nd0.46Ti3O12 (BNdT) as a ferroelectric layer. The BNdT films can crystallize well at 700àfor 1 h. The J-V curve shows the MFIS structure has a good insulating property. C-V hysteresis loops at various sweeping speed were collected as were polarization types. The leakage current density, dielectric constant and dielectric loss were found to be dependent on the annealing temperature. The dielectric constant and dielectric loss at a frequency of 100 kHz are 98 and 0.092, respectively.The metal-ferroelectric-insulator-semiconductor (MFIS) structure has been fabricated using Bi3.54Nd0.46Ti3O12 (BNdT) as a ferroelectric layer. The BNdT films can crystallize well at 700àfor 1 h. The J-V curve shows the MFIS structure has a good insulating property. C-V hysteresis loops at various sweeping speed were collected as were polarization types. The leakage current density, dielectric constant and dielectric loss were found to be dependent on the annealing temperature. The dielectric constant and dielectric loss at a frequency of 100 kHz are 98 and 0.092, respectively.
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Journal Title
Journal of Crystal Growth
Volume
268
Publisher URI
Subject
Macromolecular and materials chemistry
Physical chemistry
Materials engineering